Journal ArticleDOI
Breaking the Speed Limits of Phase-Change Memory
Desmond Loke,Desmond Loke,Desmond Loke,Tae Hoon Lee,W. J. Wang,Luping Shi,Rong Zhao,Y. C. Yeo,T. C. Chong,Stephen R. Elliott +9 more
TLDR
Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed, which paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.Abstract:
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.read more
Citations
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Journal ArticleDOI
In-memory computing with resistive switching devices
TL;DR: This Review Article examines the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, theirresistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation.
Journal ArticleDOI
Phase-change materials for non-volatile photonic applications
TL;DR: Materials whose optical properties can be reconfigured are crucial for photonic applications such as optical memories and phase-change materials offer such utility and recent progress is reviewed.
Journal ArticleDOI
Integrated all-photonic non-volatile multi-level memory
Carlos Ríos,Matthias Stegmaier,Peiman Hosseini,Di Wang,Torsten Scherer,C. David Wright,Harish Bhaskaran,Wolfram H. P. Pernice,Wolfram H. P. Pernice +8 more
TL;DR: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy with real-time switching energy.
Journal ArticleDOI
Zinc Oxide Nanostructures for NO2 Gas–Sensor Applications: A Review
TL;DR: Various factors such as NO2 concentrations, annealing temperature, ZnO morphologies and particle sizes, relative humidity, operating temperatures which are affecting the NO2 gas sensing properties are discussed in this review.
Journal ArticleDOI
An optoelectronic framework enabled by low-dimensional phase-change films
TL;DR: Using extremely thin phase-change materials and transparent conductors, electrically induced stable colour changes in both reflective and semi-transparent modes are demonstrated and a pixelated approach can be used in displays on both rigid and flexible films.
References
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Georg Kresse,Jürgen Hafner +1 more
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Journal ArticleDOI
Reversible Electrical Switching Phenomena in Disordered Structures
TL;DR: In this paper, a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field was described in various types of disordered materials, particularly amorphous semiconductors covering a wide range of compositions.