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Stephen R. Elliott

Researcher at University of Cambridge

Publications -  315
Citations -  11471

Stephen R. Elliott is an academic researcher from University of Cambridge. The author has contributed to research in topics: Amorphous solid & Chalcogenide. The author has an hindex of 47, co-authored 300 publications receiving 10029 citations. Previous affiliations of Stephen R. Elliott include Beihang University & University of Oxford.

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Optical properties and applications of chalcogenide glasses: a review

TL;DR: In this paper, a review of chalcogenide glasses and the current status of their applications is given, and the possibilities of fabricating active devices, such as fiber amplifiers and lasers, are presented.
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Breaking the Speed Limits of Phase-Change Memory

TL;DR: Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed, which paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
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Medium-range structural order in covalent amorphous solids

TL;DR: Despite their lack of long-range translational and orientational order, covalent amorphous solids can exhibit structural order over both short and medium length scales, the latter reaching to 20 A or so.
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Photoinduced effects and metastability in amorphous semiconductors and insulators

TL;DR: In this paper, the photo-induced properties of amorphous semiconductors, including chalcogenide glasses, are reviewed and the features exhibited in common by all types of these materials, whether in the experimentally observed photoinduced metastability or the theoretical models used to account for such behaviour are stressed.
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Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

TL;DR: It is described for the first time how the entire write/erase cycle for the Ge(2)Sb-Te composition can be reproduced using ab initio molecular-dynamics simulations, and the microscopic insight provided on crystal nucleation should open up new ways to develop superior phase-change memory materials.