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Desmond Loke

Researcher at Singapore University of Technology and Design

Publications -  35
Citations -  1215

Desmond Loke is an academic researcher from Singapore University of Technology and Design. The author has contributed to research in topics: Phase-change memory & Medicine. The author has an hindex of 11, co-authored 24 publications receiving 970 citations. Previous affiliations of Desmond Loke include University of Cambridge & Centre for Life.

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Breaking the Speed Limits of Phase-Change Memory

TL;DR: Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed, which paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
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Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

TL;DR: It is revealed that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds.
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Tailoring transient-amorphous states: Towards fast and power-efficient phase-change memory and neuromorphic computing

TL;DR: A new methodology for manipulating transient-amorphous states of phase-change memory (PCM) materials is reported as a viable means to boost the speed, yet reduce the power consumption of PC memories.
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Ultrafast phase-change logic device driven by melting processes

TL;DR: By a subtle investigation of the well-characterized phase-transition behavior, this simple method provides an elegant solution to boost significantly the speed of phase-change–based in-memory logic devices, thus paving the way for achieving computers that can perform computations approaching terahertz processing rates.
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Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials

TL;DR: A comprehensive microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials is provided by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics simulations.