Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

/pdf/electronics-and-optoelectronics-of-two-dimensional-2jbqr1unvw.pdf

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Graphene-Like Two-Dimensional Materials

2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The Orthogonality Issue 937 3.1.3. Impact of the Site Energy 937 3.1.4. Electronic Coupling in Oligoacene Derivatives 938

Charge transport in organic semiconductors.

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.

High-mobility field-effect transistors based on transition metal dichalcogenides

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

The substitution of chloro or bromo groups in tetracene gives rise to the change of crystal structure, having a substantial effect on carrier transport. Halogenated tetracene derivatives were synthesized and grown into single crystals. Monosubstituted 5-bromo- and 5-chlorotetracenes have the herringbone-type structure, while 5,11-dichlorotetracene has the slipped π stacking structure. Mobility of 5,11-dichlorotetracene was measured to be as high as 1.6 cm2/V·s in single-crystal transistors. The π stacking structure, which enhances π orbital overlap and facilitates carrier transport, may thus be responsible for this high mobility.

Synthesis, crystal structure, and transistor performance of tetracene derivatives

Catalytic reduction of oxygen and hydrogen peroxide by nanoporous gold

Copper phthalocyanine (Cu–Pc) single crystals were grown by physical vapor transport and field-effect transistors (FETs) on the surface of these crystals were prepared These FETs function as p-channel accumulation-mode devices Charge carrier mobilities of up to 1cm2∕Vs combined with a low field-effect threshold were obtained These remarkable FET characteristics, along with the highly stable chemical nature of Cu–Pc, make it an attractive candidate for device applications

Roswitha Zeis

Papers

High-mobility field-effect transistors based on transition metal dichalcogenides

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Synthesis, crystal structure, and transistor performance of tetracene derivatives

Catalytic reduction of oxygen and hydrogen peroxide by nanoporous gold

Single-crystal field-effect transistors based on copper phthalocyanine