抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

/pdf/electronics-and-optoelectronics-of-two-dimensional-2jbqr1unvw.pdf

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

/pdf/self-assembled-monolayers-of-thiolates-on-metals-as-a-form-1neb0hj3k4.pdf

Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

Low-temperature solution-processed photovoltaics suffer from low efficiencies because of poor exciton or electron-hole diffusion lengths (typically about 10 nanometers). Recent reports of highly efficient CH3NH3PbI3-based solar cells in a broad range of configurations raise a compelling case for understanding the fundamental photophysical mechanisms in these materials. By applying femtosecond transient optical spectroscopy to bilayers that interface this perovskite with either selective-electron or selective-hole extraction materials, we have uncovered concrete evidence of balanced long-range electron-hole diffusion lengths of at least 100 nanometers in solution-processed CH3NH3PbI3. The high photoconversion efficiencies of these systems stem from the comparable optical absorption length and charge-carrier diffusion lengths, transcending the traditional constraints of solution-processed semiconductors.

https://dr.ntu.edu.sg/bitstream/10220/16761/1/long-range balanced electron- and hole-transport lengths in organic-inorganic ch3nh3pbi3.pdf

Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH3NH3PbI3

Graphene-Like Two-Dimensional Materials

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

https://science.sciencemag.org/content/sci/303/5664/1644.full.pdf

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.

Intrinsic Charge Transport on the Surface of Organic Semiconductors

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.

High-mobility field-effect transistors based on transition metal dichalcogenides

Organic electronics constitute an innovative field, with interesting applications complementary to the silicon semiconductor technology. From a scientific perspective, there is large interest in the fundamental understanding of electrical transport in organic semiconductors. However, a well-developed microscopic description is still lacking, due to the complicated character of the many-body polaronic-type of charge carriers in molecular compounds. In this Thesis, we have experimentally studied the intrinsic charge transport properties of organic semiconductors by using organic single-crystal field-effect transistors. The electric field-effect has been frequently used to investigate thin films of organic compounds. Unfortunately, thin-film transistors are not suitable for the study of intrinsic electronic properties of organic conductors, because their characteristics are often strongly affected by imperfections of the film structure and by insufficient purity of organic materials. Thus, for a higher degree of molecular ordering and an improved quality of the FET, we fabricate devices on the surface of a free-standing single crystal of organic molecules. In short, in this work we have achieved successful fabrication of high-quality single-crystal FETs, exhibiting high mobilities and signs of intrinsic transport. Herewith, we have identified new aspects that influence charge transport in organic semiconductor FETs, and we have performed exploratory measurements in the charge density regime approaching one carrier per molecule.

/pdf/organic-single-crystal-field-effect-transistors-10ummt4m8w.pdf

Organic single-crystal field-effect transistors

Mobility is an important charge-transport parameter in organic, inorganic and hybrid semiconductors. We outline some of the common pitfalls of mobility extraction from field-effect transistor (FET) measurements and propose practical recommendations to avoid reporting erroneous mobilities in publications.

Vitaly Podzorov

Papers

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Intrinsic Charge Transport on the Surface of Organic Semiconductors

High-mobility field-effect transistors based on transition metal dichalcogenides

Organic single-crystal field-effect transistors

Critical assessment of charge mobility extraction in FETs