R
Ruqi Han
Researcher at Peking University
Publications - 155
Citations - 2429
Ruqi Han is an academic researcher from Peking University. The author has contributed to research in topics: MOSFET & Threshold voltage. The author has an hindex of 23, co-authored 155 publications receiving 2291 citations.
Papers
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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
TL;DR: In this article, the characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied.
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Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
Haowei Zhang,Lifeng Liu,Bin Gao,Yuanjun Qiu,Xiaoyan Liu,Jing Lu,Ruqi Han,Jinfeng Kang,Bin Yu +8 more
TL;DR: In this article, an implantation doping approach is implemented to fabricate Gd-doped HfO2 resistive random access memory (RRAM) devices, which achieved improved uniformity of switching parameters and increased switching speed without obvious reliability degradation.
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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
TL;DR: In this paper, a unified model was proposed to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory devices using the concept of electron hopping transport along filamentary conducting paths in dielectric layer.
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Ionic doping effect in ZrO2 resistive switching memory
Haowei Zhang,Bin Gao,Bing Sun,Guopeng Chen,Lang Zeng,Lifeng Liu,Xiaoyan Liu,Jing Lu,Ruqi Han,Jinfeng Kang,Bin Yu +10 more
TL;DR: In this paper, the impact of metallic ion doping in ZrO2 on the behaviors of VO, including defect energy level and formation energy (Evf), was investigated, and it was shown that trivalent dopant (Al, Ti, or La) significantly reduced Evf.
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Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers
TL;DR: In this article, a technical solution is presented to improve the uniformity of HfO 2-based resistive switching memory by embedding thin Al layers between HFO 2 and electrode layers, which stabilizes the generation of conductive filaments.