Lang Zeng

TL;DR: In this article, a physics-based compact model of metal-oxide-based resistive-switching random access memory (RRAM) cell under dc and ac operation modes is presented.

TL;DR: In this paper, the impact of metallic ion doping in ZrO2 on the behaviors of VO, including defect energy level and formation energy (Evf), was investigated, and it was shown that trivalent dopant (Al, Ti, or La) significantly reduced Evf.

TL;DR: In this article, a simulation method is developed to investigate the critical issues correlated with the interaction between devices and the circuit, and an optimal design scheme for turn-on voltage and conductance of the selector is proposed based on the simulation.

TL;DR: It is found that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately, and the variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin- orbits.

TL;DR: In this article, the authors investigated the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme.