J
Jinfeng Kang
Researcher at Peking University
Publications - 405
Citations - 9548
Jinfeng Kang is an academic researcher from Peking University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 44, co-authored 377 publications receiving 7810 citations. Previous affiliations of Jinfeng Kang include National University of Singapore.
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Journal ArticleDOI
Optoelectronic resistive random access memory for neuromorphic vision sensors.
Feichi Zhou,Zheng Zhou,Jiewei Chen,Tsz Hin Choy,Jingli Wang,Ning Zhang,Ziyuan Lin,Shimeng Yu,Jinfeng Kang,H.-S. Philip Wong,Yang Chai +10 more
TL;DR: A simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviours.
Journal ArticleDOI
A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
TL;DR: The performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation.
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
TL;DR: In this article, the characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied.
Journal ArticleDOI
HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.
TL;DR: A bit- cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work.