C
Chen Shang
Researcher at ASM International
Publications - 6
Citations - 156
Chen Shang is an academic researcher from ASM International. The author has contributed to research in topics: Thin film & Silicon nitride. The author has an hindex of 3, co-authored 6 publications receiving 156 citations.
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Patent
Deposition of SiN
TL;DR: In this paper, the precursors for forming silicon nitride films are described and a method for depositing silicon-nitride films comprises a multi-step plasma treatment, which is a nitrogen plasma treatment.
Patent
Reaction chamber passivation and selective deposition of metallic films
Delphine Longrie,Antti Niskanen,Han Wang,Qi Xie,Jan Willem Maes,Chen Shang,Toshiharu Watarai,Onuma Takahiro,Dai Ishikawa,Kunitoshi Namba +9 more
TL;DR: In this paper, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon, and the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deblurring process.
Patent
Method of forming a sin thin film
TL;DR: In this paper, the authors proposed a method and a precursor for forming silicon nitride films, which can be treated with a plasma treatment or a nitrogen plasma treatment, depending on the precursors for depositing the silicon.
Patent
Method of forming SiN thin film on substrate in reaction space
TL;DR: In this article, the precursors for forming silicon nitride films are described and a method for depositing silicon-nitride films comprises a multi-step plasma treatment, which is a nitrogen plasma treatment.
Patent
Process for depositing thin film on substrate selectively
Delphine Longrie,Antti Niskanen,Han Wang,Qi Xie,Jan Willem Maes,Chen Shang,Toshiharu Watarai,Onuma Takahiro,Dai Ishikawa,Kunitoshi Namba +9 more
TL;DR: In this paper, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon, and the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deblurring process.