Showing papers by "S.E. Holland published in 2003"
TL;DR: In this article, a charge-coupled device (CCD) was fabricated on high resistivity, n-type silicon, which allows for depletion depths of several hundred micrometers.
Abstract: Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 /spl Omega//spl middot/cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.
263 citations
Journal Article•
TL;DR: In this article, the first large-format science-grade chips for astronomical imaging are now being characterized at Lick Observatory, using a technology developed at LBNL to fabricate low-leakage silicon microstrip detectors for high-energy physics.
Abstract: Charge-coupled devices (CCDs) of novel design have been fabricated at Lawrence Berkeley National Laboratory (LBNL), and the first large-format science-grade chips for astronomical imaging are now being characterized at Lick Observatory. They are made on 300-μm thick n-type high-resistivity ( ∼10 000 Ω cm ) silicon wafers, using a technology developed at LBNL to fabricate low-leakage silicon microstrip detectors for high-energy physics. A bias voltage applied via a transparent contact on the back side fully depletes the substrate, making the entire volume photosensitive and ensuring that charge reaches the potential wells with minimal lateral diffusion. The development of a thin, transparent back-side contact compatible with fully depleted operation permits blue response comparable to that obtained with thinned CCDs. Since the entire region is active, high quantum efficiency is maintained to nearly λ=1000 nm , above which the silicon band gap effectively truncates photoproduction. Early characterization results indicate a charge transfer efficiency >0.999995, readout noise 4 e's at −132°C, full well capacity >300 000 e 's, and quantum efficiency >85% at λ=900 nm .
12 citations
Centre national de la recherche scientifique1, University of Michigan2, Lawrence Berkeley National Laboratory3, Stockholm University4, University of Pennsylvania5, Indiana University6, University of California, Berkeley7, American Astronomical Society8, California Institute of Technology9, Space Telescope Science Institute10, Case Western Reserve University11, University of Cambridge12
TL;DR: In this article, a well-adapted spectrograph concept has been developed for the SNAP (SuperNova/Acceleration Probe) experiment to ensure proper identification of Type Ia supernovae and to standardize the magnitude of each candidate by determining explosion parameters.
Abstract: A well-adapted spectrograph concept has been developed for the SNAP (SuperNova/Acceleration Probe) experiment The goal is to ensure proper identification of Type Ia supernovae and to standardize the magnitude of each candidate by determining explosion parameters An instrument based on an integral field method with the powerful concept of imager slicing has been designed and is presented in this paper The spectrograph concept is optimized to have very high efficiency and low spectral resolution (R {approx} 100), constant through the wavelength range (035-17{micro}m), adapted to the scientific goals of the mission
5 citations