S
S. K. Biswas
Researcher at University of Calcutta
Publications - 21
Citations - 214
S. K. Biswas is an academic researcher from University of Calcutta. The author has contributed to research in topics: Quantum dot & Light intensity. The author has an hindex of 8, co-authored 20 publications receiving 197 citations.
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Journal ArticleDOI
Influence of rank and macerals on the burnout behaviour of pulverized Indian coal
Nandita Choudhury,S. K. Biswas,Pradip Sarkar,M. C. Kumar,Sujit Ghosal,Tandra Mitra,Amrita Mukherjee,Anup Choudhury +7 more
TL;DR: In this paper, the burning behavior of coals of Indian origin by TGA and in drop tube furnace (DTF) with particular emphasis on the role of macerals and their associations was investigated.
Journal Article
Influence of seed treatment with biocides and foliar spray with fungicides for management of brown leaf spot and sheath blight of paddy
TL;DR: Seed treatment with biocides was provided good protection of seed against seed borne infection, resulted enhanced germination of paddy seed and enhanced growth ofPaddy seedling.
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D-A-D-A-D push pull organic small molecules based on 5,10-dihydroindolo[3,2-b]indole (DINI) central core donor for solution processed bulk heterojunction solar cells
Jangkeun Sim,Kwangseok Do,Kihyoung Song,Abhishek Sharma,S. K. Biswas,Ganesh D. Sharma,Jaejung Ko +6 more
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A simple theoretical analysis of the effective electron mass in III-V, ternary and quaternary materials in the presence of light waves
TL;DR: In this article, a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane, is presented.
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Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field
TL;DR: In this paper, the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III-V, II-VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures was analyzed.