S
S. L. Rumyantsev
Researcher at Ioffe Institute
Publications - 4
Citations - 60
S. L. Rumyantsev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Schottky diode & Irradiation. The author has an hindex of 3, co-authored 4 publications receiving 42 citations.
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Journal ArticleDOI
Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes
TL;DR: In this paper, the authors report the results of the high energy (0.9 µm) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes.
Journal ArticleDOI
Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
TL;DR: In this article, the current voltage characteristics and low-frequency noise in high voltage 4H-SiC junction barrier Schottky diodes irradiated with high energy (15 MeV) protons were studied at different temperatures and irradiation doses.
Journal ArticleDOI
Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes
TL;DR: In this paper, the low-frequency noise in high voltage Ni/4H-SiC Schottky diodes irradiated with high energy (0.9 MeV) electrons was studied in the frequency range from 1 Hz to 50 kHz, temperature interval 295-410 K, and irradiation dose Φ from 0.2
Journal ArticleDOI
Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes
TL;DR: In this article, it was shown that the high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to an increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of low frequency noise.