S
Samia Safa
Researcher at Bangladesh University of Engineering and Technology
Publications - 7
Citations - 68
Samia Safa is an academic researcher from Bangladesh University of Engineering and Technology. The author has contributed to research in topics: Gate dielectric & Transistor. The author has an hindex of 3, co-authored 7 publications receiving 51 citations.
Papers
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Journal ArticleDOI
Dual-material double-gate tunnel FET: gate threshold voltage modeling and extraction
TL;DR: In this paper, a new analytical model for the gate threshold voltage of a dual-material double-gate (DMDG) tunnel field effect transistor (TFET) was derived by solving the quasi-two-dimensional Poisson's equation in the lightly doped Si film.
Journal ArticleDOI
Physics-Based Generalized Threshold Voltage Model of Multiple Material Gate Tunneling FET Structure
TL;DR: In this paper, a generalized 2D analytical model of gate threshold voltage for multiple material gate tunneling FET (TFET) structures is derived, which includes the effect of gate and drain bias, gate material workfunction, oxide thickness, silicon film thickness, gate dielectric, and other device parameters.
Journal ArticleDOI
A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance
Proceedings ArticleDOI
Two-dimensional model of Dual Metal double gate tunnel FETs
TL;DR: In this article, a 2D analytical model of the surface potential, electric field of DMDG TFET is developed by solving quasi-two-dimensional Poisson equation, which incorporates the effects of drain voltage, gate work function, gate length, gate dielectric thickness and silicon film thickness.
Proceedings ArticleDOI
Triple material double gate TFET with optimized si film thickness
TL;DR: In this paper, the effect of Si film thickness on performance of TMDG TFET was analyzed using two dimensional TCAD simulations and the tunneling current is substantially dependent on device thickness and the device physics regulating it.