S
Satoru Matsuishi
Researcher at Tokyo Institute of Technology
Publications - 184
Citations - 7610
Satoru Matsuishi is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Superconductivity & Electride. The author has an hindex of 37, co-authored 180 publications receiving 6361 citations.
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Journal ArticleDOI
Essential role of hydride ion in ruthenium-based ammonia synthesis catalysts
Masaaki Kitano,Yasunori Inoue,Hiroki Ishikawa,Kyosuke Yamagata,Takuya Nakao,Tomofumi Tada,Satoru Matsuishi,Toshiharu Yokoyama,Michikazu Hara,Hideo Hosono +9 more
TL;DR: Ruthenium-loaded metal hydrides with hydrogen vacancies function as efficient catalysts for ammonia synthesis under low temperature and low pressure conditions.
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Two-Dimensional Transition-Metal Electride Y2C
Xiao Zhang,Zewen Xiao,Hechang Lei,Yoshitake Toda,Satoru Matsuishi,Toshio Kamiya,Shigenori Ueda,Hideo Hosono +7 more
TL;DR: In this paper, the authors reported that the reported electrides only consist of main-group elements and that they were ionic crystals in which the anionic electrons are confined to interstitial subnanometer-sized spaces.
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High-throughput ab initio screening for two-dimensional electride materials.
TL;DR: A tailored modeling was conducted to determine unexplored compounds including the s-block elements that are suitable for 2D electrides, and found that K2Cl, K2Br, Rb2Br dialkali halides are highly plausible candidates, and the Cs2O(1-x)F(x) halogen-doped Dialkali oxide is a promising candidate.
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Hydrogen in layered iron arsenides: Indirect electron doping to induce superconductivity
Taku Hanna,Yoshinori Muraba,Satoru Matsuishi,Naoki Igawa,Katsuaki Kodama,Shin-ichi Shamoto,Hideo Hosono +6 more
TL;DR: In this article, it was shown that up to 40% of the O(n 2 ) ions can be replaced by H(n 3 ) ions, with electrons being supplied into the FeAs layer to maintain neutrality.
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Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
TL;DR: In this article, anionic hydrogens bonding to metal cations in amorphous In-Ga-Zn-O (a-IGZO) thin films for thin-film transistors (TFT) applications is reported.