Transparent conductors as solar energy materials: A panoramic review

The motion of energetic charged particles inside a monocrystalline solid can be strongly influenced by channeling and blocking effects. The present article reviews the theory, the experimental studies, and some of the applications of these effects. The coverage of the published literature extends through June 1973.

Channeling and related effects in the motion of charged particles through crystals

We present a review on the emerging materials for novel plasmonic colloidal nanocrystals. We start by explaining the basic processes involved in surface plasmon resonances in nanoparticles and then discuss the classes of nanocrystals that to date are particularly promising for tunable plasmonics: non-stoichiometric copper chalcogenides, extrinsically doped metal oxides, oxygen-deficient metal oxides and conductive metal oxides. We additionally introduce other emerging types of plasmonic nanocrystals and finally we give an outlook on nanocrystals of materials that could potentially display interesting plasmonic properties.

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New materials for tunable plasmonic colloidal nanocrystals

Vanadium oxide surface studies

https://escholarship.org/content/qt2xf0c3gx/qt2xf0c3gx.pdf?t=pxd659

Recent progresses on physics and applications of vanadium dioxide

Tungsten doping into vanadium dioxide thermochromic films by high-energy ion implantation and thermal annealing

V1−xMoxO2 thermochromic films deposited by reactive magnetron sputtering

Epitaxial growth of W-doped VO2/V2O3 multilayer on α-Al2O3(110) by reactive magnetron sputtering

Optical and structural changes of silica glass substrates implanted with Cu and O ions and subjected to thermal annealing, are examined as a function of the implantation sequence by optical absorption, Rutherford Backscattering Spectrometry (RBS) and thin film X-ray diffraction (XRD) measurements. Before annealing, the distribution of Cu is affected by the implantation sequence and O- followed by Cu-implantation leads to fewer Cu nanoparticles than the Cu- followed by O ion implantation. After annealing, however, the redistribution behavior of Cu and optical absorption features are similar for both co-implanted samples. Nanocrystals of Cu2O are mainly formed by annealing and the absorption peaks at about 340, 450 and 480 nm are observed for the co-implanted samples. The peaks are possibly evidence for the presence of the copper oxide nanocrystals.

High-energy cu and o ion co-implantation into silica glasses

Polycrystalline β‐SiC samples were implanted with 50 keV 15N ions with fluences ranging from 3×1017 to 1.5×1018 ions/cm2 at elevated temperature up to 1100 °C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 °C were reduced distinctly in comparison with the profiles implanted below 930 °C or annealed at 1100 °C. The redistribution of nitrogen implanted in SiC at 1100 °C was ascribed to the formation of β‐Si3N4 crystallites in SiC, which was confirmed by x‐ray diffraction at glancing incidence.

Seita Tanemura

Papers

Tungsten doping into vanadium dioxide thermochromic films by high-energy ion implantation and thermal annealing

V1−xMoxO2 thermochromic films deposited by reactive magnetron sputtering

Epitaxial growth of W-doped VO2/V2O3 multilayer on α-Al2O3(110) by reactive magnetron sputtering

High-energy cu and o ion co-implantation into silica glasses

Formation of β‐Si3N4 by nitrogen implantation into SiC