Hyoungsub Kim

TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

TL;DR: In this article, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field effect transistors.

TL;DR: In this article, single-crystal Ge nanowires are synthesized by a low-temperature (275°C) chemical vapor deposition (CVD) method, and Boron doped p-type GeNW field effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed.

TL;DR: In this article, the effect of hydroxyl groups on the electrical properties of pentacene-based organic thin film transistors (OTFTs) was investigated and it was confirmed that large hysteresis usually observed in OTFT devices was strongly related to the hydroxy bonds existing inside of polymeric dielectrics and could be reduced by substituting with cinnamoyl groups.