S
Shik Shin
Researcher at University of Tokyo
Publications - 725
Citations - 21528
Shik Shin is an academic researcher from University of Tokyo. The author has contributed to research in topics: Angle-resolved photoemission spectroscopy & Photoemission spectroscopy. The author has an hindex of 63, co-authored 706 publications receiving 18481 citations. Previous affiliations of Shik Shin include Synchrotron Radiation Center & National Institute for Materials Science.
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High repetition pump-and-probe photoemission spectroscopy based on a compact fiber laser system
TL;DR: It is described that the TRPES response of an oriented Bi(111)/HOPG sample is useful for fine-tuning the spatial overlap of the pump and probe beams even when p is as low as 30 nJ/mm2, thereby facilitating investigations of ultrafast electronic dynamics in the low pump fluence (p) region.
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Electronic structures in the bulk and surface states of protonic conductor CaZrO3 by soft-X-ray spectroscopy
TL;DR: In this paper, the electronic structure in the bulk state of protonic conductor In-doped CaZrO3 (CZI) has been investigated by soft-X-ray emission spectroscopy (SXES).
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Angle-resolved photoemission study of the mixed valence oxide V 6 O 13 : Quasi-one-dimensional electronic structure and its change across the metal-insulator transition
TL;DR: In this paper, angle-resolved photoemission spectroscopy of mixed valence oxide was performed to show a metal-insulator transition (MIT) at the Fermi level.
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Giant Rashba splitting of quasi-one-dimensional surface states on Bi/InAs(110)- ( 2 × 1 )
Takuto Nakamura,Yoshiyuki Ohtsubo,Yuki Yamashita,Shin Ichiro Ideta,Kiyohisa Tanaka,Koichiro Yaji,Ayumi Harasawa,Shik Shin,Fumio Komori,Ryu Yukawa,Koji Horiba,Hiroshi Kumigashira,Shin-ichi Kimura +12 more
TL;DR: In this article, the spin-polarized structure of the Bi/InAs(110)-$(2\ifmmode\times\else\texttimes\fi{}1) surface was revealed by angle-resolved photoelectron spectroscopy (ARPES).
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Surface core-level shifts of 4d states of (110) cleaved InSb
TL;DR: In this paper, the location of the cation-derived empty surface state was re-evaluated to be at 0.33 eV above the valence band maximum, relative to their bulk components.