S
Shik Shin
Researcher at University of Tokyo
Publications - 725
Citations - 21528
Shik Shin is an academic researcher from University of Tokyo. The author has contributed to research in topics: Angle-resolved photoemission spectroscopy & Photoemission spectroscopy. The author has an hindex of 63, co-authored 706 publications receiving 18481 citations. Previous affiliations of Shik Shin include Synchrotron Radiation Center & National Institute for Materials Science.
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Kondo hybridization and quantum criticality in β-YbAlB4 by laser-ARPES
Cédric Bareille,Shintaro Suzuki,M. Nakayama,Kenta Kuroda,Andriy H. Nevidomskyy,Yosuke Matsumoto,Satoru Nakatsuji,Takeshi Kondo,Shik Shin +8 more
TL;DR: In this paper, an angle-resolved photoemission (ARPES) study was conducted on a quasiparticle peak (QP) emerging from hybridization, characterized by a binding energy and an onset of coherence both at about 4 meV, which conforms with a previously observed reduced Kondo scale at about 40 K.
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Photoluminescence core-level excitation of CdSe quantum dot structures
TL;DR: In this paper, a new method of photoluminescence (PL) measurements, that is, exciting core levels using synchrotron radiation, has been proposed, which has been applied to characterize CdSe quantum dot (QD) structures.
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Hole-state and defect structure of proton conductor SrTiO3 observed by high-resolution X-ray absorption spectroscopy
Tohru Higuchi,Takeyo Tsukamoto,Noriko Sata,Mareo Ishigame,Kiyoshi Kobayashi,Shu Yamaguchi,Yoichi Ishiwata,Takayoshi Yokoya,Masami Fujisawa,Shik Shin +9 more
TL;DR: In this article, the hole state and defect structure of proton conductor SrTi 1-x Sc x O 3 have been studied by high-resolution X-ray absorption spectroscopy.
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Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga1-xCrxN Films
Tomoyuki Takeuchi,Munetaka Taguchi,Yoshihisa Harada,Takashi Tokushima,Yasutaka Takata,Ashish Chainani,J. J. Kim,Hisao Makino,Takafumi Yao,Takeyo Tsukamoto,Shik Shin,Keisuke Kobayashi +11 more
TL;DR: In this paper, the electronic structure of newly discovered MBE-grown diluted magnetic semiconductor Ga1-xCrxN(x = 0.0, 0.06,0.29, 1.0) was studied using X-ray absorption spectroscopy across the N 1s and Cr 2p edges.
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Dependence of SiO2/Si interface structure on low-temperature oxidation process
Takeshi Hattori,Kazufumi Azuma,Yukihiko Nakata,M. Shioji,T. Shiraishi,Tetsuya Yoshida,K. Takahashi,Hiroshi Nohira,Y Takata,Shik Shin,Keisuke Kobayashi +10 more
TL;DR: In this article, the dependence of the chemical structure and uniformity of three kinds of approximately 1-nm-thick silicon oxide films formed by using atomic oxygen at 300-°C on the oxidation process was studied.