In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

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Fundamentals of zinc oxide as a semiconductor

We review the properties and behavior of 20 X-ray binaries that contain a dynamically-confirmed black hole, 17 of which are transient systems. During the past decade, many of these transien...

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X-Ray Properties of Black-Hole Binaries

Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow2,3,4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation5,6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7,8,9,10, and even p–n junctions11,12,13. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Quasinormal modes are eigenmodes of dissipative systems. Perturbations of classical gravitational backgrounds involving black holes or branes naturally lead to quasinormal modes. The analysis and classification of the quasinormal spectra require solving non-Hermitian eigenvalue problems for the associated linear differential equations. Within the recently developed gauge-gravity duality, these modes serve as an important tool for determining the near-equilibrium properties of strongly coupled quantum field theories, in particular their transport coefficients, such as viscosity, conductivity and diffusion constants. In astrophysics, the detection of quasinormal modes in gravitational wave experiments would allow precise measurements of the mass and spin of black holes as well as new tests of general relativity. This review is meant as an introduction to the subject, with a focus on the recent developments in the field.

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Quasinormal modes of black holes and black branes

Black hole accretion flows can be divided into two broad classes: cold and hot. Whereas cold accretion flows consist of cool optically thick gas and are found at relatively high mass accretion rates, hot accretion flows, the topic of this review, are virially hot and optically thin, and occur at lower mass accretion rates. They are described by accretion solutions such as the advection-dominated accretion flow and luminous hot accretion flow. Because of energy advection, the radiative efficiency of these flows is in general lower than that of a standard thin accretion disk. Moreover, the efficiency decreases with decreasing mass accretion rate. Observations show that hot accretion flows are associated with jets. In addition, theoretical arguments suggest that hot flows should produce strong winds. Hot accretion flows are believed to be present in low-luminosity active galactic nuclei and in black hole X-ray binaries in the hard and quiescent states. The prototype is Sgr A*, the ultralow-luminosity supermassive black hole at our Galactic center. The jet, wind, and radiation from a supermassive black hole with a hot accretion flow can interact with the external interstellar medium and modify the evolution of the host galaxy.

Hot Accretion Flows Around Black Holes

Observations of X-ray emissions from binary systems have long since been considered important tools to test general relativity in strong-field regimes. The high-frequency quasi-periodic oscillations (HFQPOs) observed in binaries containing a black hole candidate, in particular, have been proposed as a means to measure more directly the properties of the black hole, such as its mass and spin. Numerous models have been suggested to explain the HFQPOs and the rich phenomenology accompanying them. Many of these models rest on a number of assumptions and are at times in conflict with the most recent observations. We here propose a new, simple model in which the HFQPOs result from basic p-mode oscillations of a small accretion torus orbiting close to the black hole. We show that within this model the key properties of the HFQPOs can be explained simply, given a single reasonable assumption. We also discuss observational tests that can refute the model.

A new simple model for high-frequency quasi-periodic oscillations in black hole candidates

We investigated the optical properties of epitaxial n-type ZnO films grown on lattice-matched ScAlMgO4 substrates. As the Ga doping concentration increased up to 6×1020cm−3, the absorption edge showed a systematic blueshift, consistent with the Burstein–Moss effect. A bright near-band-edge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.

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Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga doping concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.

/pdf/gallium-concentration-dependence-of-room-temperature-near-2clvd28jw0.pdf

Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga

This is the first of a series of papers investigating the oscillation properties of relativistic, non-self-gravitating tori orbiting around a black hole. In this initial paper we consider the axisymmetric oscillation modes of a torus constructed in a Schwarzschild space-time. To simplify the treatment and make it as analytical as possible, we build our tori with vertically integrated and vertically averaged quantities, thus transforming the eigenvalue problem into a set of coupled ordinary differential equations. The tori are also modelled with a number of different non-Keplerian distributions of specific angular momentum, and we discuss how the oscillation properties change when different distributions of angular momentum are considered. Our investigation progresses by steps. We first consider a local analysis in Newtonian gravity and determine the properties of acoustic wave propagation within these objects, as well as the relations between acoustic and epicyclic oscillations. Next, we extend the local analysis to a general relativistic framework. Finally, we perform a global analysis and determine both the eigenfunctions and the eigenfrequencies of the axisymmetric oscillations corresponding to the p modes of relativistic tori. These behave as sound waves globally trapped in the torus and possess eigenfrequencies appearing in the simple sequence 2:3:4:..., independently of the distribution of angular momentum considered. The properties of the modes investigated here are in good agreement with those observed in recent numerical simulations, and could have a number of different applications. In X-ray binary systems containing a black hole candidate, for instance, p-mode oscillations could be used to explain the harmonic relations in the high-frequency quasi-periodic oscillations observed. In systems comprising a massive torus orbiting a black hole, on the other hand, p-mode oscillations could be used to explain the development or the suppression of the runaway instability.

Oscillations of vertically integrated relativistic tori – I. Axisymmetric modes in a Schwarzschild space–time

This is the first of a series of papers investigating the oscillation properties of relativistic, non-selfgravitating tori orbiting around a black hole. In this initial paper we consider the axisymmetric oscillation modes of a torus constructed in a Schwarzschild spacetime. To simplify the treatment and make it as analytical as possible, we build our tori with vertically integrated and vertically averaged quantities. Our investigation progresses by steps. We first consider a local analysis in Newtonian gravity and determine the properties of acoustic wave propagation within these objects, as well as the relations between acoustic and epicyclic oscillations. Next, we extend the local analysis to a general relativistic framework. Finally, we perform a global analysis and determine both the eigenfunctions and the eigenfrequencies of the axisymmetric oscillations corresponding to the p modes of relativistic tori. These behave as sound waves globally trapped in the torus and possess eigenfrequencies appearing in the simple sequence 2:3:4:..., independently of the distribution of angular momentum considered. The properties of the modes investigated here are in good agreement with those observed in recent numerical simulations and could have a number of different applications. In X-ray binary systems containing a black hole candidate, for instance, p-mode oscillations could be used to explain the harmonic relations in the high frequency quasi-periodic oscillations observed. In systems comprising a massive torus orbiting a black hole, on the other hand, p-mode oscillations could be used to explain the development or the suppression of the runaway instability.

Shin'ichirou Yoshida

Papers

A new simple model for high-frequency quasi-periodic oscillations in black hole candidates

Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga

Oscillations of vertically integrated relativistic tori – I. Axisymmetric modes in a Schwarzschild space–time

Oscillations of vertically integrated relativistic tori -- I. Axisymmetric modes in a Schwarzschild spacetime