S
Shiue-Lung Chen
Researcher at National Cheng Kung University
Publications - 20
Citations - 396
Shiue-Lung Chen is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Diode. The author has an hindex of 10, co-authored 20 publications receiving 383 citations.
Papers
More filters
Journal ArticleDOI
Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes
Shui-Jinn Wang,Kai-Ming Uang,Shiue-Lung Chen,Yu-Cheng Yang,Shu-Cheng Chang,Tron-Min Chen,Chao-Hsuing Chen,Bor-Wen Liou +7 more
TL;DR: The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented in this paper.
Journal ArticleDOI
Role of grain boundary and grain defects on ferromagnetism in Co:ZnO films
TL;DR: In this article, the annealing effects on magnetism, structure, and ac transport for Co:ZnO films have been systematically investigated by using the impedance spectra, the change in grain boundary and grain defects of these films can be analyzed.
Journal ArticleDOI
Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric
Chih-Wei Yang,Yean-Kuen Fang,C. H. Chen,Shiue-Lung Chen,Chuan Yu Lin,C. S. Lin,Ming-Tsong Wang,You-Ru Lin,Tuo-Hung Hou,Liang-Gi Yao,S. C. Chen,Mong-Song Liang +11 more
TL;DR: In this paper, the flatband voltage shift in n-type and p-type MOSFETs was investigated and it was found that the direction of ΔVFB depends on the Fermi level position in the gate material.
Journal ArticleDOI
Fabrication of Dicing-Free Vertical-Structured High-Power GaN-Based Light-Emitting Diodes With Selective Nickel Electroplating and Patterned Laser Liftoff Techniques
TL;DR: In this article, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated.
Journal ArticleDOI
Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
TL;DR: In this article, the performance of vertical-structure metallic-substrate GaN-based light-emitting diodes (VM-LEDs) with a patterned SiO2 film as the current blocking layer (CBL) was investigated.