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Shizuo Fujita
Researcher at Kyoto University
Publications - 360
Citations - 11151
Shizuo Fujita is an academic researcher from Kyoto University. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 49, co-authored 351 publications receiving 9904 citations. Previous affiliations of Shizuo Fujita include Ryukoku University & Osaka University.
Papers
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Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
TL;DR: In this article, structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ga 0.95N (6 nm) multiple quantum wells.
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Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
TL;DR: In this paper, a β-Ga2O3 thin film was grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy, which exhibited a sharp absorption edge at around 5.0 eV, which is in the deep-ultraviolet region.
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Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells
TL;DR: In this paper, the dynamical behavior of radiative recombination has been assessed in the multiple-quantum well structure by means of transmittance, electroreflectance (ER), photoluminescence excitation (PLE), and time-resolved photolumininescence (TRPL) spectroscopy.
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Carrier concentration dependence of band gap shift in n-type ZnO:Al films
Jianguo Lu,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takeshi Ohshima,Z. Z. Ye,Yu-Jia Zeng,Y. Z. Zhang,L. P. Zhu,Haiping He,B. H. Zhao +11 more
TL;DR: In this article, the band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models, and the shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO.
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Heteroepitaxy of Corundum-Structured α-Ga2O3 Thin Films on α-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition
Daisuke Shinohara,Shizuo Fujita +1 more
TL;DR: In this paper, the α-Ga2O3 films have narrow fullwidths at half maximum (FWHMs) in their X-ray diffraction curves, for example, about 60 arcsec.