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Sichao Du

Researcher at Zhejiang University

Publications -  22
Citations -  998

Sichao Du is an academic researcher from Zhejiang University. The author has contributed to research in topics: Graphene & Nanowire. The author has an hindex of 8, co-authored 17 publications receiving 710 citations. Previous affiliations of Sichao Du include University of Sydney.

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Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

TL;DR: This review investigates the experimental efforts in interfacing 2D layers with 3D materials and analyzes the properties of the heterojunctions formed between them, calling for careful reconsideration of the physical models describing the junction behavior.
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Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors

TL;DR: This work demonstrates the highly sensitive MIR photodetection of QD/graphene hybrid phototransistors by using plasmonic silicon (Si) QDs doped with boron (B), and the resulting UV-to-MIR ultrabroadband photodetic features ultrahigh responsivity, gain, and specific detectivity.
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Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing

TL;DR: These optically stimulated Si-NC-based synaptic devices demonstrate a series of important synaptic functionalities, well mimicking biological synapses, and have important implication for the large-scale deployment of Si in the emerging neuromorphic computing.
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A Broadband Fluorographene Photodetector

TL;DR: A photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative consistently shows broadband photoresponse from the ultraviolet to the mid-infrared wavelengths, with three orders of magnitude enhanced responsivity compared to pristine graphenePhotodetectors.
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Quantitative dopant distributions in GaAs nanowires using atom probe tomography

TL;DR: An atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge of controlable doping of semiconductor Nanowires.