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Journal ArticleDOI

Quantitative dopant distributions in GaAs nanowires using atom probe tomography

TLDR
An atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge of controlable doping of semiconductor Nanowires.
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This article is published in Ultramicroscopy.The article was published on 2013-09-01. It has received 33 citations till now. The article focuses on the topics: Nanowire & Dopant.

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Citations
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Journal ArticleDOI

Synthesis and Applications of III-V Nanowires

TL;DR: The way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires is reviewed, and one of how the different families ofnanowires can contribute to applications is combined.
Journal ArticleDOI

Enabling near-atomic–scale analysis of frozen water

TL;DR: In this article, the authors used atom probe tomography to analyze frozen liquids in 3D with subnanometer resolution, using nanoporous gold as a sample preparation strategy and showed that the gold-ice interface reveals a substantial increase in the solute concentrations across the interface.
Journal ArticleDOI

Dopant, composition and carrier profiling for 3D structures

TL;DR: In this article, the authors evaluate the performance of 3D metrology tools and concepts for 3D devices and structures, and assess not only the ability to achieve 3D spatial resolution, but also the physical property which is probed, i.e., dopants versus carriers, as well as the complexity of the method used because this impacts on success rate, turn-around time, throughput, automation etc.
Book ChapterDOI

Chapter 4 – Experimental Methodologies for the Characterization of Nanoparticles

TL;DR: This chapter elucidates some of the methods commonly used for nanoparticle characterization and explains the importance of knowing a nanoparticle's size and properties for controlling its biological properties and/or stability.
References
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Book

The stopping and range of ions in solids

TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Journal ArticleDOI

Nanowire electronic and optoelectronic devices

TL;DR: In this article, a broad array of nanowire building blocks available to researchers and discuss a range of electronic and optoelectronic nanodevices, as well as integrated device arrays, that could enable diverse and exciting applications in the future.
Journal ArticleDOI

Controlled polytypic and twin-plane superlattices in iii-v nanowires.

TL;DR: By selectively tuning the crystal structure, this work fabricates highly reproducible polytypic and twin-plane superlattices within single nanowires, which could lead to bandgap engineering and novel electronic behaviour.
Journal ArticleDOI

Twinning superlattices in indium phosphide nanowires

TL;DR: It is shown that the crystal structure of indium phosphide (InP) nanowires can be controlled by using impurity dopants, and it is demonstrated that zinc decreases the activation barrier for two-dimensional nucleation growth of zinc-blende InP and therefore promotes crystallization of the InPnanowires in the zinc- Blende, instead of the commonly found wurtzite, crystal structure.
Journal ArticleDOI

Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire

TL;DR: The first direct measurements of dopant concentrations in arbitrary regions of individual nanowires are reported, finding that differences in precursor decomposition rates between the liquid catalyst and solid nanowire surface give rise to a heavily doped shell surrounding an underdoped core.