S
Somnath Ghosh
Researcher at Indian Institute of Technology, Jodhpur
Publications - 291
Citations - 3957
Somnath Ghosh is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Microstructured optical fiber & Optical fiber. The author has an hindex of 28, co-authored 287 publications receiving 3318 citations. Previous affiliations of Somnath Ghosh include University of Calcutta & Indian Institute of Science.
Papers
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Investigation of oxidation behaviour of AlCrN and AlTiN coatings deposited by arc enhanced HIPIMS technique
TL;DR: In this paper, the authors investigated the oxidation behavior of the AlTiN and AlCrN coatings deposited using the novel arc enhanced HIPIMS technique at elevated temperature and found that the formation of flower-like structures at localized sites over the film surface due to oxidation.
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Electron capture cross section in collision of multi-charged neon ions with ground state hydrogen and helium
TL;DR: In this article, the authors used the classical trajectory Monte Carlo method and the post form of three-body boundary corrected continuum intermediate state (BCCIS-3B) approximation to calculate the cross sections for total and state-selective electron capture in collision of highly charged Neq+ ions with ground state hydrogen atom in the intermediate to high energy region.
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Effect of Broadening of Tail States on the Einstein Relation in Heavily Doped Compensated Semiconductors
Somnath Ghosh,A. N. Chakravarti +1 more
TL;DR: In this paper, the dependence of the Einstein relation on carrier concentration in heavily doped compensated semiconductors with broadened tail states, both in the presence and absence of a quantizing magnetic field, taking n-InSb as an example, was investigated.
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Room temperature ferromagnetism in 200 KeV Nickel ion implanted Zinc oxide film
TL;DR: In this paper, the presence of Ni in ZnO matrix is detected using X-ray Fluroscence (XRF) technique and magnetic measurement by alternating gradient magnetometer (AGM) shows a clear hysterisis loop at room temperature with a saturation magnetization of 0.025 eemu/cm3, remnant magnetization and coercive field of 53.14 ee.
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Effect of Si/Al ratio on engineering properties of alkali-activated GGBS pastes
TL;DR: In this paper, the effect of synthesis parameter, silicon/aluminum molar ratio, on the engineering properties of alkali-activated blast-furnace slag paste has been investigated.