S
Stefanie Morkötter
Researcher at Technische Universität München
Publications - 25
Citations - 1282
Stefanie Morkötter is an academic researcher from Technische Universität München. The author has contributed to research in topics: Nanowire & Semiconductor. The author has an hindex of 20, co-authored 25 publications receiving 1173 citations. Previous affiliations of Stefanie Morkötter include Nanosystems Initiative Munich.
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Journal ArticleDOI
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
Benedikt Mayer,Daniel Rudolph,Joscha Schnell,Stefanie Morkötter,Julia Winnerl,J. Treu,Kai Müller,Gregor Bracher,Gerhard Abstreiter,Gregor Koblmüller,Jonathan J. Finley +10 more
TL;DR: By carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors using core-shell GaAs-AlGaAs nanowires.
Journal ArticleDOI
Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires
Daniel Rudolph,Stefan Funk,Markus Döblinger,Stefanie Morkötter,Simon Hertenberger,Lucas Schweickert,J. Becker,Sonja Matich,Max Bichler,Danĉe Spirkoska,Ilaria Zardo,Jonathan J. Finley,Gerhard Abstreiter,Gregor Koblmüller +13 more
TL;DR: High-resolution metrology techniques and associated chemical analysis reveal rich structure in the AlGaAs alloy composition due to interface segregation, nanofaceting, and local alloy fluctuations within GaAs-Al0.3Ga0.7As core-shell nanowires grown by molecular beam epitaxy on silicon.
Journal ArticleDOI
Monolithically Integrated High-β Nanowire Lasers on Silicon
Benedikt Mayer,L. Janker,Bernhard Loitsch,J. Treu,T. Kostenbader,S. Lichtmannecker,T. Reichert,Stefanie Morkötter,Michael Kaniber,Gerhard Abstreiter,Christopher Gies,Gregor Koblmüller,Jonathan J. Finley +12 more
TL;DR: It is demonstrated how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature.
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Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires
Matthias Weiß,Jörg B. Kinzel,Jörg B. Kinzel,Florian J. R. Schülein,Florian J. R. Schülein,Michael Heigl,Daniel Rudolph,Daniel Rudolph,Stefanie Morkötter,Markus Döblinger,Markus Döblinger,Max Bichler,Gerhard Abstreiter,Gerhard Abstreiter,Jonathan J. Finley,Jonathan J. Finley,Gregor Koblmüller,Gregor Koblmüller,Achim Wixforth,Achim Wixforth,Achim Wixforth,Hubert J. Krenner,Hubert J. Krenner,Hubert J. Krenner +23 more
TL;DR: In this paper, the optical properties of emission centers forming in radial heterostructure GaAs-Al0.3Ga0.7As nanowires were investigated and it was shown that these emitters exhibit quantum-dot-like characteristics.
Journal ArticleDOI
Enhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires
J. Treu,Michael Bormann,Hannes Schmeiduch,Markus Döblinger,Stefanie Morkötter,Sonja Matich,Peter R. Wiecha,Kai Saller,Benedikt Mayer,Max Bichler,Markus-Christian Amann,Jonathan J. Finley,Gerhard Abstreiter,Gregor Koblmüller +13 more
TL;DR: These findings highlight that enhanced mid-infrared emission efficiencies with effective carrier confinement and suppression of nonradiative recombination are highly sensitive to the quality of the InAs-InAsP core-shell interface.