Stella N. Elliott

TL;DR: In this paper, the authors demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 cm−2, a room-temperature output power exceeding 105mW and operation up to 120°C.

TL;DR: In this paper, the early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images.

TL;DR: The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance.

TL;DR: In this paper, a series of self-assembled InP quantum dot structures were investigated and the Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from 0.43 to 0.58, centering on a strain compensated structure.

TL;DR: In this paper, the authors explored the origins of the threshold current temperature dependence in InP quantum-dot (QD) lasers and found that the peak gain required to overcome the losses becomes more difficult to achieve at elevated temperature due to thermal spreading of carriers among the available states.