Martin Hempel

TL;DR: In this paper, a COD diagram determined for a batch of broad-area AlGaAs-based diode lasers emitting in the 630-1100 nm range is presented. But the authors focus on recent experimental work performed in the authors' laboratories and focus on knowledge-based solutions towards more robust diode laser.

TL;DR: In this paper, an analysis of the catastrophic optical damage effect that is artificially provoked in 808 nm emitting broad area diode lasers by single current pulses is presented, which involves in situ tracing of emission power and hot spot motion within the cavity as well as verification of the resulting defects by defect spectroscopy and cathodoluminescence mapping.

TL;DR: In this paper, the early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images.

TL;DR: In this paper, single-pulse tests of the catastrophic optical damage (COD) are performed for three batches of diode lasers with different gain-regions, and the tests involve in situ inspection of front, rear, and side of the devices by a thermocamera.

TL;DR: In this paper, GaAs-based terahertz quantum-cascade lasers (QCLs) are continuously tuned in their emission frequency by illuminating the rear facet with a near-infrared, high-power diode laser.