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Sujeet Chaudhary

Researcher at Indian Institute of Technology Delhi

Publications -  241
Citations -  3505

Sujeet Chaudhary is an academic researcher from Indian Institute of Technology Delhi. The author has contributed to research in topics: Thin film & Magnetization. The author has an hindex of 26, co-authored 216 publications receiving 2847 citations. Previous affiliations of Sujeet Chaudhary include Indian Institutes of Technology & Raja Ramanna Centre for Advanced Technology.

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Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures.

TL;DR: It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations.
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First-order transition from antiferromagnetism to ferromagnetism in C e ( F e 0.96 Al 0.04 ) 2

TL;DR: In this article, the pseudobinary C15 Laves phase compound was used as a paradigm for studying a ferromagnetic to antiferromagnetic phase transition and the thermomagnetic history effects in magnetotransport as well as magnetization measurements across this phase transition were presented.
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Spin-polarized tunneling in the half-metallic ferromagnets La 0.7-x Ho x Sr 0.3 MnO 3 (x=0 and 0.15): Experiment and theory

TL;DR: In this paper, the authors derived a theoretical expression for the contribution of spin-polarized tunneling to the magnetoresistance in granular ferromagnetic systems under the mean-field approximation.
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Room temperature ferromagnetism in Mn doped TiO2 thin films: Electronic structure and Raman investigations

TL;DR: In this article, dc-magnetization, electronic structural, and Raman investigations of Ti1−xMnxO2 (x = 0.00, 0.10, and 0.15) thin films deposited on fused-quartz substrate by a simple and cost effective spray pyrolysis technique have been reported.
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High temperature ferromagnetism in Mn-doped SnO2 nanocrystalline thin films

TL;DR: In this article, it was shown that it is possible to induce room temperature ferromagnetism, exhibiting high transition temperature, in tin oxide thin films by introducing manganese in a SnO2 lattice.