S
Susumu Oyama
Researcher at Hokkaido University
Publications - 6
Citations - 450
Susumu Oyama is an academic researcher from Hokkaido University. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Epitaxy. The author has an hindex of 5, co-authored 5 publications receiving 427 citations.
Papers
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Journal ArticleDOI
Mechanism of anomalous current transport in n-type GaN Schottky contacts
Hideki Hasegawa,Susumu Oyama +1 more
TL;DR: In this paper, a thin surface barrier (TSB) model was proposed in which the width of the Schottky barrier is reduced due to the presence of unintentional surface donors.
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Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
TL;DR: In this article, the surface passivation process of GaN utilizing SiNx film by electron-cyclotron-resonance assisted plasma chemical vapor deposition (ECR-CVD) achieved low interface state density, 2×1011cm−2'eV−1.
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Mechanism of current leakage through metal/n-GaN interfaces
TL;DR: In this article, the authors investigated the role of tunneling in the carrier transport of Schottky diodes across the GaN Schittky barrier and proposed a barrier modified thermionic-field emission (TFE) model to explain the observed large reverse leakage currents.
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X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution
TL;DR: In this article, the NH4OH-based treatment was found to enhance the intensity of the E2 (high) Raman peak and to reduce the root-mean-square value of surface roughness.
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Surface characterization of GaN and AlGaN layers grown by MOVPE
TL;DR: In this paper, the surface properties of GaN and Al 0.17 Ga 0.83 N were systematically investigated by X-ray photoelectron spectroscopy (XPS).