Sven Beyer

TL;DR: This work shows the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology, a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.

TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.

TL;DR: It is shown that ternary content-addressable memories (TCAMs) can be used as attentional memories, in which the distance between a query vector and each stored entry is computed within the memory itself, thus avoiding data transfer.

TL;DR: In this paper, the authors review the recent progress of ferroelectric field effect transistors (FeFETs) based on ferro-electric hafnium oxide (HfO2), ten years after the first report on such a device.

TL;DR: It is shown that embedded size-competitive FeFETs already allow solid separation of the memory states, approaching a mature 6Sigma distribution and an outlook of this technology beyond the von Neumann computing will be discussed, considering some of the various applications of this new, versatile device.