J
Jan Paul
Researcher at GlobalFoundries
Publications - 93
Citations - 2782
Jan Paul is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Non-volatile memory & Adsorption. The author has an hindex of 21, co-authored 93 publications receiving 2060 citations. Previous affiliations of Jan Paul include Chalmers University of Technology & Luleå University of Technology.
Papers
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Proceedings ArticleDOI
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Johannes Müller,T. S. Boscke,Stefan Müller,Ekaterina Yurchuk,P. Polakowski,Jan Paul,Dominik Martin,Tony Schenk,K. Khullar,A. Kersch,Wenke Weinreich,S. Riedel,Konrad Seidel,Amit Kumar,Thomas M. Arruda,Sergei V. Kalinin,Till Schlösser,Roman Boschke,R. van Bentum,Uwe Schröder,Thomas Mikolajick +20 more
TL;DR: In this paper, the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment.
Proceedings ArticleDOI
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
Proceedings ArticleDOI
Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Johannes Müller,Ekaterina Yurchuk,Till Schlösser,Jan Paul,R. Hoffmann,Stefan Müller,Dominik Martin,Stefan Slesazeck,P. Polakowski,Jonas Sundqvist,Malte Czernohorsky,Konrad Seidel,P. Kücher,Roman Boschke,Martin Trentzsch,K. Gebauer,Uwe Schröder,Thomas Mikolajick +17 more
TL;DR: In this paper, the most aggressively scaled ferroelectric field effect transistor (FET) was successfully fabricated using Si:HfO 2 in a 28 nm HKMG stack.
Journal ArticleDOI
Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories
Ekaterina Yurchuk,Johannes Müller,Stefan Müller,Jan Paul,Milan Pešić,Ralf van Bentum,Uwe Schroeder,Thomas Mikolajick +7 more
TL;DR: In this article, the kinetics of charge trapping and its interplay with the ferroelectric polarization switching are analyzed in detail using the single-pulse $I$ − $V_{G}$ technique.
Journal ArticleDOI
XPS characterisation of chalcopyrite chemically and bio-leached at high and low redox potential
TL;DR: In this paper, the authors investigated the chalcopyrite leaching in sulphuric acid media under constant redox potential conditions in solution, and the leaching residues were analyzed by X-ray diffraction and x-ray photometric analysis.