T
Tarek Ali
Researcher at Fraunhofer Society
Publications - 93
Citations - 2151
Tarek Ali is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Ferroelectricity & Computer science. The author has an hindex of 18, co-authored 65 publications receiving 1047 citations. Previous affiliations of Tarek Ali include Dresden University of Technology & King Abdulaziz University.
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Journal ArticleDOI
Influence of crystal structure of nanosized ZrO2 on photocatalytic degradation of methyl orange.
TL;DR: The higher activity of the monoclinic ZrO2 sample for the photocatalytic degradation of methyl orange can be attributed to the combining effects of factors including the presence of small amount of oxygen-deficient zirconium oxide phase, high crystallinity, large pores, and high density of surface hydroxyl groups.
Journal ArticleDOI
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Tarek Ali,P. Polakowski,Stefan Riedel,T. Buttner,Thomas Kampfe,Matthias Rudolph,B. Patzold,Konrad Seidel,D. A. Lohr,R. Hoffmann,Malte Czernohorsky,Kati Kühnel,P. Steinke,Jesús Calvo,K. Zimmermann,Johannes Müller +15 more
TL;DR: In this paper, the effect of increasing the permittivity (k) value of the interface layer on the performance of the metal-ferroelectric-insulator-semiconductor (MFIS)-FE-HfO2 FeFET is studied in terms of its switching characteristics, endurance, and retention.
Journal ArticleDOI
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
Tarek Ali,P. Polakowski,S. Riedel,T. Buttner,Thomas Kampfe,Matthias Rudolph,B. Patzold,Konrad Seidel,D. A. Lohr,R. Hoffmann,Malte Czernohorsky,Kati Kühnel,X. Thrun,Norbert Hanisch,P. Steinke,Jesús Calvo,Johannes Müller +16 more
TL;DR: In this article, the authors report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties by varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness.
Proceedings ArticleDOI
A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage
Tarek Ali,R. Olivo,Maximilian Lederer,R. Hoffmann,P. Steinke,K. Zimmermann,U. Muhle,Konrad Seidel,Johannes Müller,P. Polakowski,Kati Kühnel,Malte Czernohorsky,Thomas Kampfe,Matthias Rudolph,B. Patzold,David Lehninger,Franz Muller +16 more
TL;DR: In this article, 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers was reported.
Proceedings ArticleDOI
FeFET: A versatile CMOS compatible device with game-changing potential
Sven Beyer,Stefan Dunkel,Martin Trentzsch,Johannes Müller,Andreas Hellmich,Dirk Utess,Jan Paul,Dominik Kleimaier,John Pellerin,Stefan Müller,J. Ocker,Antoine Benoist,Haidi Zhou,Menno Mennenga,M. Schuster,Fabio Tassan,M. Noack,Ali Pourkeramati,Franz Muller,Maximilian Lederer,Tarek Ali,R. Hoffmann,Thomas Kampfe,Konrad Seidel,Halid Mulaosmanovic,Evelyn T. Breyer,Thomas Mikolajick,Stefan Slesazeck +27 more
TL;DR: It is shown that embedded size-competitive FeFETs already allow solid separation of the memory states, approaching a mature 6Sigma distribution and an outlook of this technology beyond the von Neumann computing will be discussed, considering some of the various applications of this new, versatile device.