Sven Van den Berghe

TL;DR: In this article, the growth kinetics, chemical composition, and crystallization behavior of the TiO2 films were compared for combinations of the two precursors with three different sources of oxygen thermal ALD using H2O and plasma-enhanced ALD PEALD using H 2 Oo r O 2 plasma.

TL;DR: In this article, the effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied and it was found that the Ru thin films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature of 270 °C.

TL;DR: In this paper, the effect of forming gas annealing (FGA) and O2 ambient anneeling on the fixed charge of metal-oxide-semiconductor capacitors was systematically investigated.

TL;DR: In situ NH3 surface-nitridation treatments at 250°C on both p-and n-type Ge(100) wafers were investigated in this article, where an ultrathin high quality GeOxNy interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm.

TL;DR: In this paper, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and PEALD of TiN has been implemented to narrow the band gap ofTiO2, and the results showed that the crystallization behavior of these films changed after nitrogen doping.