W
Wojciech Knap
Researcher at University of Montpellier
Publications - 540
Citations - 14182
Wojciech Knap is an academic researcher from University of Montpellier. The author has contributed to research in topics: Terahertz radiation & Field-effect transistor. The author has an hindex of 58, co-authored 518 publications receiving 12774 citations. Previous affiliations of Wojciech Knap include Warsaw University of Technology & Polish Academy of Sciences.
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Journal ArticleDOI
Graphene field-effect transistors as room-temperature terahertz detectors
L. Vicarelli,Miriam S. Vitiello,D. Coquillat,Antonio Lombardo,Andrea C. Ferrari,Wojciech Knap,Marco Polini,Vittorio Pellegrini,Alessandro Tredicucci +8 more
TL;DR: In this paper, an efficient room-temperature graphene detector for terahertz radiation was presented, which promises to be considerably faster than competing techniques, and is shown to have high carrier mobility.
Journal ArticleDOI
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
Wojciech Knap,V. Kachorovskii,Yanqing Deng,Sergey Rumyantsev,Jian Lu,Remigijus Gaska,Michael Shur,Grigory Simin,Xiaobo Sharon Hu,M. Asif Khan,C. A. Saylor,L. C. Brunel +11 more
TL;DR: In this paper, the photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage, which can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R. Tauk,Frederic Teppe,S. Boubanga,D. Coquillat,Wojciech Knap,Yahya Moubarak Meziani,C. Gallon,Frederic Boeuf,Thomas Skotnicki,Claire Fenouillet-Beranger,Duncan K. Maude,Sergey L. Rumyantsev,Michael Shur +12 more
TL;DR: In this paper, Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300nm have been studied as room temperature plasma wave detectors of 0.7THz electromagnetic radiation.
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Broadband terahertz imaging with highly sensitive silicon CMOS detectors
Franz Schuster,D. Coquillat,H. Videlier,Maciej Sakowicz,Frederic Teppe,Laurent Dussopt,Benoit Giffard,Thomas Skotnicki,Wojciech Knap +8 more
TL;DR: Terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz in the important atmospheric window around 300 GHz and at room temperature.
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Weak antilocalization and spin precession in quantum wells.
Wojciech Knap,C. Skierbiszewski,A. Zduniak,Elzbieta Litwin-Staszewska,D. Bertho,F. Kobbi,Jean-Louis Robert,G. E. Pikus,F. G. Pikus,S. V. Iordanskii,Vincent Mosser,Konstantinos Zekentes,Yu. B. Lyanda-Geller +12 more
TL;DR: Comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in crystals and two-dimensional structures.