Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.

https://www.mdpi.com/1424-8220/10/9/8604/pdf

ZnO-Based Ultraviolet Photodetectors

Low-dimensional (LD) nanostructures are ideal systems for constructing high-performance photodetectors due to their tailored geometries, high surface-area-to-volume ratios and rationally designed surfaces. This article provides a brief summary about recent progress on LD nanostructures based visible-light-blind ultraviolet photodetectors. The current challenges and an outlook on the future developments of this research field are summarized and highlighted.

Low-dimensional nanostructure ultraviolet photodetectors.

Recent advances in ultraviolet photodetectors

ZnO is a wide-bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive for its great potential in short-wavelength optoelectronic devices, in which high quality films and heterostructures are essential for high performance. In this study, controlled growth of ZnO-based thin films and heterostructures by molecular beam epitaxy (MBE) is demonstrated on different substrates with emphasis on interface engineering. It is revealed that ultrathin AlN or MgO interfacial layers play a key role in establishing structural and chemical compatibility between ZnO and substrates. Furthermore, a quasi-homo buffer is introduced prior to growth of a wurtzite MgZnO epilayer to suppress the phase segregation of rock-salt MgO, achieving wide-range bandgap tuning from 3.3 to 4.55 eV. Finally, a visible-blind UV detector exploiting a double heterojunction of n-ZnO/insuIator-MgO/p-Si and a solar-blind UV detector using MgZnO as an active layer are fabricated by using the growth techniques discussed here.

/pdf/controlled-growth-of-high-quality-zno-based-films-and-2eblen3rrj.pdf

Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors

Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV detection and high-sensitivity and low-noise “sandwich” photodetector with large detective area is difficult to be fabricated because it is usually hard for traditional wide band gap semiconductors to boast both high conductivity and high SBUV transparency. Here, we proposed to use graphene as the transparent conductive layer to form graphene/β-Ga2O3 heterojunction. With the help of large-area graphene and hot carrier multiplication, a SBUV photodetector with large detective area, low dark current, and high sensitivity was successfully assembled. Its photoresponsivity is 1–3 orders of magnitude higher than that of the conventional SBUV photodetectors, and its response speed can rival the best device ever reported.

High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on high quality wurtzite Mg0.55Zn0.45O epitaxial film. Photoresponse spectra show a responsivity peak of 22 mA/W under 130 V bias. A sharp cutoff was recognized at a wavelength of 270 nm, and a temporal response measurement indicates a fast decay time of less than 500 ns. A large internal gain was observed and interpreted by a reduced Schottky barrier height model, which fits well with the experimental data.

Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain

Exploiting a double heterojunction of n-ZnO/insulator-MgO∕p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼104 at ±2V and a dark current of 0.5nA at a reverse bias of −2V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated.

/pdf/visible-blind-ultraviolet-photodetector-based-on-double-10gnzbmbf3.pdf

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

ZnO(0001)∕Si(111) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)∕Mg(0001)∕Si(111) formed at −10°C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly.

https://espace.library.uq.edu.au/view/UQ:165942/UQ165942_OA.pdf

T. C. Zhang

Papers

Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate