Journal ArticleDOI
Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain
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TLDR
A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on high quality wurtzite Mg0.55Zn0.45O epitaxial film.Abstract:
A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on high quality wurtzite Mg0.55Zn0.45O epitaxial film. Photoresponse spectra show a responsivity peak of 22 mA/W under 130 V bias. A sharp cutoff was recognized at a wavelength of 270 nm, and a temporal response measurement indicates a fast decay time of less than 500 ns. A large internal gain was observed and interpreted by a reduced Schottky barrier height model, which fits well with the experimental data.read more
Citations
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Journal ArticleDOI
Low-dimensional nanostructure ultraviolet photodetectors.
TL;DR: This article provides a brief summary about recent progress on LD nanostructures based visible-light-blind ultraviolet photodetectors and an outlook on the future developments of this research field are highlighted.
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High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication
TL;DR: With the help of large-area graphene and hot carrier multiplication, a SBUV photodetector with large detective area, low dark current, and high sensitivity was successfully assembled and can rival the best device ever reported.
Journal ArticleDOI
High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film
TL;DR: In this article, a mixed-phase ZnMgO photodetector with two photoresponse bands was presented, which showed only one response peak and its −3 dB cut-off wavelength is around 275 nm.
Journal ArticleDOI
Dual-band MgZnO ultraviolet photodetector integrated with Si
TL;DR: In this paper, a dual-band ultraviolet photodetector was constructed by growing high quality MgxZn1−xO layers on Si substrate with molecular beam epitaxy.
References
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Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
Stephan Lany,Alex Zunger +1 more
TL;DR: In this article, the anion vacancies in II-VI and chalcopyrite semiconductors were identified as a class of intrinsic defects that can exhibit metastable behavior.
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Current transport in metal-semiconductor-metal (MSM) structures
S.M. Sze,D.J. Coleman,A. Loya +2 more
TL;DR: In this paper, the thermionic emission theory has been used to study the currentvoltage characteristics of a metal-semiconductor-metal (MSM) structure, and the critical voltage at which the minority carrier injection increases rapidly can be varied by varying the semiconductor doping and thickness.
Journal ArticleDOI
Structure and optical properties of zno/mg0.2zn0.8o superlattices
TL;DR: In this paper, a superlattice structure with a period ranging from 8 to 18 nm was clearly verified by cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction.
Journal ArticleDOI
Gain mechanism in GaN Schottky ultraviolet detectors
TL;DR: In this article, a unified description of the gain mechanism in GaN Schottky detectors is presented, which is valid for all device structures under study, and represents a unified model for all devices under study.
Journal ArticleDOI
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films
TL;DR: In this article, the fabrication and characterization of visible blind ultraviolet photodetectors based on Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates.