T
T. Gruendl
Researcher at Technische Universität München
Publications - 26
Citations - 471
T. Gruendl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Vertical-cavity surface-emitting laser & Laser. The author has an hindex of 9, co-authored 26 publications receiving 447 citations.
Papers
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Journal ArticleDOI
Surface micromachined tunable 1.55 μm-VCSEL with 102 nm continuous single-mode tuning.
Christian Gierl,T. Gruendl,Pierluigi Debernardi,Karolina Zogal,Christian Grasse,H. A. Davani,G. Böhm,Sandro Jatta,Franko Küppers,P. Meißner,Markus-Christian Amann +10 more
TL;DR: For the first time a vertical-cavity surface-emitting laser (VCSEL) with a single-mode wavelength-tuning over 102 nm in the range of 1550 nm is demonstrated.
Journal ArticleDOI
High-Speed 1550 nm VCSEL Data Transmission Link Employing 25 GBd 4-PAM Modulation and Hard Decision Forward Error Correction
Roberto Rodes,Michael Mueller,Bomin Li,Jose Estaran,Jesper Bevensee Jensen,T. Gruendl,M. Ortsiefer,Christian Neumeyr,Jürgen Rosskopf,Knud J. Larsen,Markus-Christian Amann,Idelfonso Tafur Monroy +11 more
TL;DR: In this paper, the authors presented a high-speed four-level pulse amplitude modulation at 25 GBd of a 1.5 μ m vertical-cavity surface-emitting laser (VCSEL).
Proceedings ArticleDOI
100 Gb/s single VCSEL data transmission link
Roberto Rodes,Jose Estaran,Bomin Li,Michael Muller,Jesper Bevensee Jensen,T. Gruendl,M. Ortsiefer,Christian Neumeyr,Jürgen Rosskopf,Knud J. Larsen,Markus-Christian Amann,Idelfonso Tafur Monroy +11 more
TL;DR: In this paper, a single 1.5 um VCSEL has been experimentally demonstrated using 4-level pulse amplitude modulation (PAM) in a 1.100 Gb/s optical fiber transmission link.
Journal ArticleDOI
Type-II InP-based lasers emitting at 2.55 μm
Stephan Sprengel,Alexander Andrejew,Kristijonas Vizbaras,T. Gruendl,Kathrin Geiger,Gerhard Boehm,Christian Grasse,Markus-Christian Amann +7 more
TL;DR: In this article, the authors reported room-temperature lasing at 2.55μm for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C.
Journal ArticleDOI
InP-Based Type-II Quantum-Well Lasers and LEDs
Stephan Sprengel,Christian Grasse,Peter R. Wiecha,Alexander Andrejew,T. Gruendl,Gerhard Boehm,Ralf Meyer,Markus-Christian Amann +7 more
TL;DR: In this paper, the authors introduce the material system and device concepts, and report the latest achievements, such as electrically pumped lasing operation up to a wavelength of 2.6 μm in pulsed mode, continuous-wave resonant-cavity light-emitting diode operation, and photoluminescence even up to 3.9 μm.