Tae-Hyeon Kim

TL;DR: In this article, the authors present resetvoltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices, where abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors.

TL;DR: This research extensively investigate the analog symmetric multi-level switching characteristics of zinc tin oxide (ZTO)-based memristor devices for neuromorphic systems and proposes a proposed ZTO-basedmemristor composed of metal-insulator-semiconductor (MIS) structure.

TL;DR: Nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiNx layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiNX layer as an active dielectric.

TL;DR: It is verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE.

TL;DR: In this paper, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOY layers.