T
Takeshi Inoshita
Researcher at Tokyo Institute of Technology
Publications - 50
Citations - 2375
Takeshi Inoshita is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Electronic structure & Quantum dot. The author has an hindex of 22, co-authored 50 publications receiving 2051 citations. Previous affiliations of Takeshi Inoshita include National Institute for Materials Science & NEC.
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Journal ArticleDOI
Electron relaxation in a quantum dot: Significance of multiphonon processes.
Takeshi Inoshita,Hiroyuki Sakaki +1 more
TL;DR: Calculation of relaxation rate, as a function of level separation, indicates the significant contribution of LO±LA processes, which create a window of rapid relaxation around the longitudinal-optical phonon energy.
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Natural van der Waals heterostructural single crystals with both magnetic and topological properties
Jiazhen Wu,Fucai Liu,Masato Sasase,Koichiro Ienaga,Yukiko Obata,Ryu Yukawa,Koji Horiba,Hiroshi Kumigashira,Satoshi Okuma,Takeshi Inoshita,Takeshi Inoshita,Hideo Hosono +11 more
TL;DR: In this article, natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi 2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states were reported.
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Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots
Takeshi Inoshita,Hiroyuki Sakaki +1 more
TL;DR: In this paper, the electron density of states was calculated using the Green's-function method taking into account interactions of all orders and self-consistent level broadening, showing that the electron level separation near, but not necessarily too close to, the LO-phonon energy, is equally narrow but split by the coherent mixing of electron levels (Rabi splitting).
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Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
Shyun Koshiba,H. Noge,Hidefumi Akiyama,Takeshi Inoshita,Yusuke Nakamura,Akira Shimizu,Yasushi Nagamune,Masahiro Tsuchiya,Hideaki Kano,Hiroyuki Sakaki,Kazumi Wada +10 more
TL;DR: A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top as mentioned in this paper.
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Thermalization effect on radiative decay of excitons in quantum wires.
Hidefumi Akiyama,Shyun Koshiba,Takao Someya,Kazumi Wada,H. Noge,Yoshiaki Nakamura,Takeshi Inoshita,Akira Shimizu,Hiroyuki Sakaki +8 more
TL;DR: In this paper, the radiative decay of one-dimensional excitons was studied in novel GaAs quantum wires (QWI's) prepared by molecular beam epitaxy, and the temperature dependence of the 1D radiative lifetime was measured.