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Takeshi Inoshita

Researcher at Tokyo Institute of Technology

Publications -  50
Citations -  2375

Takeshi Inoshita is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Electronic structure & Quantum dot. The author has an hindex of 22, co-authored 50 publications receiving 2051 citations. Previous affiliations of Takeshi Inoshita include National Institute for Materials Science & NEC.

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Electron relaxation in a quantum dot: Significance of multiphonon processes.

TL;DR: Calculation of relaxation rate, as a function of level separation, indicates the significant contribution of LO±LA processes, which create a window of rapid relaxation around the longitudinal-optical phonon energy.
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Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots

TL;DR: In this paper, the electron density of states was calculated using the Green's-function method taking into account interactions of all orders and self-consistent level broadening, showing that the electron level separation near, but not necessarily too close to, the LO-phonon energy, is equally narrow but split by the coherent mixing of electron levels (Rabi splitting).
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Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

TL;DR: A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top as mentioned in this paper.
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Thermalization effect on radiative decay of excitons in quantum wires.

TL;DR: In this paper, the radiative decay of one-dimensional excitons was studied in novel GaAs quantum wires (QWI's) prepared by molecular beam epitaxy, and the temperature dependence of the 1D radiative lifetime was measured.