In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Ferromagnetic materials

Industrial Product-Service Systems—IPS2

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories.

Flash memory cells-an overview

Web Service Level Agreement (WSLA) Language Specification

A technique to electrically determine the oxide thickness (and, in some cases, the flat-band voltage and surface doping as well) of thin-insulator MOS structures is discussed. This method does not require a model for either the accumulated or inverted semiconductor interface but assumes only that the classical MOS theory holds for zero surface band bending. By means of numerical simulations and comparison with high-resolution measurements obtained with transmission-electron microscopy, the technique is found to be valid well beyond the conditions for which it has been mathematically derived and to be applicable in almost all cases of practical interest. >

Oxide-thickness determination in thin-insulator MOS structures

To probe the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr multilayers, we have sputter deposited at the interfaces of Fe(15 A)/Cr(12 A) multilayers an additional, ultrathin (0–4 A) layer of a variety of third elements (V, Mn, Ge, Ir, and Al). When alloyed with Fe in dilute concentrations, the elements chosen have known resistivities for spin‐up (ρ↑) and spin‐down (ρ↓) currents arising from spin‐dependent impurity scattering. The results show a clear correlation between α=ρ↓/ρ↑ of the respective element and the way in which GMR varies with the ultrathin layer thickness. In addition, little difference in GMR is observed between multilayers where the ultrathin layer thickness t/2 is deposited on every Fe/Cr interface and those with a thickness t deposited on alternate interfaces. This investigation demonstrates the importance of the type and total number of scattering centers per multilayer period to the GMR effect.

The role of spin‐dependent impurity scattering in Fe/Cr giant magnetoresistance multilayers

In business-to-business interactions spanning electronic commerce, supply chain management, and other applications, the terms and conditions describing the electronic interactions between businesses can be expressed as an electronic contract or trading partner agreement (TPA). From the TPA, configuration information and code that embody the terms and conditions can be generated automatically at each trading partner's site. The TPA expresses the rules of interaction between the parties to the TPA while maintaining complete independence of the internal processes at each party from the other parties. It represents a long-running conversation that comprises a single unit of business. This paper summarizes the needs of interbusiness electronic interactions. Then it describes the basic principles of electronic TPAs, followed by an overview of the proposed TPA language. The business-to-business protocol framework (BPF) provides various tools and run-time services for supporting TPA-based interaction and integration with business applications. Finally, we describe examples of solutions constructed using TPAs and BPF.

Business-to-business integration with tpaML and a business-to-business protocol framework

A method for providing multi-tenant services includes receiving a request from a user, establishing tenancy information for the user, wherein the tenancy information is selected which corresponds to a tenant of the user from among multiple tenants, customizing the request according to the tenancy information established for the user, forwarding the request to an application that is not multi-tenant aware, receiving results of the request from the application, customizing the results according to the tenancy information established for the user and corresponding to the tenant of the user, and returning customized results to the user.

System and Methods to Create a Multi-Tenancy Software as a Service Application

A method, system and computer program for providing content from a merchant site to a target user over a computer network. The merchant site provides a landing page to the target user in response to a request for data. The landing page includes a redirect module configured to redirect the target user to a destination page. The landing page also includes a cookie module configured to store a computer readable client cookie in memory identifying the marketing channel referring the target user to the merchant site.

Thao N. Nguyen

Papers

Oxide-thickness determination in thin-insulator MOS structures

The role of spin‐dependent impurity scattering in Fe/Cr giant magnetoresistance multilayers

Business-to-business integration with tpaML and a business-to-business protocol framework

System and Methods to Create a Multi-Tenancy Software as a Service Application

Landing page and channel identifier in multichannel marketing system