T
Thomas Gehrke
Researcher at Infineon Technologies
Publications - 81
Citations - 2760
Thomas Gehrke is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Gallium nitride & Layer (electronics). The author has an hindex of 28, co-authored 81 publications receiving 2753 citations. Previous affiliations of Thomas Gehrke include University of North Carolina at Chapel Hill & International Rectifier.
Papers
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Patent
Gallium nitride materials and methods
TL;DR: In this paper, a transition layer formed between the silicon substrate and the gallium nitride material layer was proposed to reduce the tendency of cracks to form, which can be used in a number of microelectronic and optical applications.
Patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
TL;DR: In this paper, a gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide, then epitaxially grown on the converted surface of the silicon layer.
Patent
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Kevin J. Linthicum,Thomas Gehrke,Darren B. Thomson,Eric Carlson,Pradeep Rajagopal,Robert F. Davis +5 more
TL;DR: In this article, the underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the gallium oxide layer is etched through the arrays of openings to define posts in the underlying GN and trenches there between.
Journal ArticleDOI
Pendeoepitaxy of gallium nitride thin films
Kevin J. Linthicum,Thomas Gehrke,Darren B. Thomson,Eric Carlson,Pradeep Rajagopal,Timothy M. Smith,Dale Batchelor,Robert F. Davis +7 more
TL;DR: Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H-SiC(0001) substrates and produced by organometallic vapor phase epitaxy.
Patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
TL;DR: In this article, the gallium nitride semiconductor structures are fabricated by etching an underlying gallium oxide layer on a sapphire substrate, to define at least one post in the underlying gallio-nide layer and at least 1 trench in the underlay gallia-oxide layer.