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Thomas Lane

Researcher at University of Manchester

Publications -  6
Citations -  118

Thomas Lane is an academic researcher from University of Manchester. The author has contributed to research in topics: Quantum tunnelling & Bilayer graphene. The author has an hindex of 3, co-authored 5 publications receiving 98 citations.

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Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

TL;DR: The direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals are reported and a technique for preparing graphene’s Dirac electrons in a particular quantum chiral state in a selected valley is demonstrated.
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Twist-controlled resonant tunnelling between monolayer and bilayer graphene

TL;DR: In this paper, the currentvoltage characteristics of a field effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride.
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Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene

TL;DR: In this article, the authors show that delaminations in bilayer graphene with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the bilayer gap, formed by a combination of valley-polarized evanescent states propagating along the delamination edges.
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Semimetallic features in quantum transport through a gate-defined point contact in bilayer graphene

TL;DR: In this paper, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest subband.
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Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene

TL;DR: In this article, the currentvoltage characteristics of a field effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride.