Thomas Lauinger

TL;DR: In this paper, the surface passivation of low resistivity singlecrystalline p-silicon wafers is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasmaenhanced chemical vapor deposition system.

TL;DR: Lauinger et al. as discussed by the authors showed that low effective surface recombination velocities Seff of 4 cm/s have been obtained at ISFH on low resistivity p-type crystalline silicon using microwave-excited remote plasmaenhanced chemical vapor deposition (RPECVD) of silicon nitride at low temperature (300-400

TL;DR: In this article, a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results.

TL;DR: In this article, a comprehensive and systematic investigation of low-cost surface passivation technologies for achieving high-performance silicon devices such as solar cells is presented, where the authors try to bridge the gap between commercial and laboratory cells by providing fast, lowcost methods for effective surface passivating.

TL;DR: In this paper, the effective surface recombination velocity (Seff) at psilicon surfaces passivated by silicon nitride films (fabricated in a plasmaenhanced chemical vapor deposition system) shows an injection-level dependence similar to the behavior of thermally oxidized silicon surfaces using the microwave-detected photoconductance decay method.