This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Phase Change Memory

Silicon nitride has been researched intensively, largely in response to the challenge to develop internal combustion engines with hot-zone components made entirely from ceramics. The ceramic engine programs have had only partial success, but this research effort has succeeded in generating a degree of understanding of silicon nitride and of its processing and properties, which in many respects is more advanced than of more widely used technical ceramics. This review examines from the historical standpoint the development of silicon nitride and of its processing into a range of high-grade ceramic materials. The development of understanding of microstructure–property relationships in the silicon nitride materials is also surveyed. Because silicon nitride has close relationships with the SiAlON group of materials, it is impossible to discuss the one without some reference to the other, and a brief mention of the development of the SiAlONs is included for completeness.

Silicon Nitride and Related Materials

Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Gas-assisted focused electron beam and ion beam processing and fabrication

The plausibility of the entropic repulsion of electrical double layers acting to stabilize an equilibrium thickness of intergranular glass films in polycrystalline ceramics is explored. Estimates of the screening length, surface potential, and surface charge required to provide a repulsive force sufficiently large to balance the attractive van der Waals and capillary forces for observable thicknesses of intergranular film are calculated and do not appear to be beyond possibility. However, it has yet to be established whether crystalline particles in a liquid-phase sintering medium possess an electrical double layer at high temperatures. If they do, such a surface charge layer may well have important consequences not only for liquid-phase sintering but also for high-frequency electrical properties and microwave sintering of ceramics containing a liquid phase.

Possible Electrical Double‐Layer Contribution to the Equilibrium Thickness of Intergranular Glass Films in Polycrystalline Ceramics

Annual review of materials research

A simple physical model is applied to time-dependent dielectric breakdown failure in ultralow-k(k=2.3) interlevel dielectrics. The model assumes that failure depends on the probability that an electron will have enough energy to damage the dielectric as it is accelerated in an electric field. It is seen that the characteristic form of the dependence of failure time on voltage or electric field is primarily dependent on the probability of having sufficient energy and not on the precise physical mechanism causing damage. An argument for a log-normal-like failure distribution is also presented.

Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

A number of the important issues in the processing of dense, superconducting ceramics are addressed and illustrated with examples drawn from our studies of the processing of yttrium barium cuprate. Among the phenomena affecting the attainment of dense, fully superconducting materials are those common to the processing of other ceramics, namely, control of composition, prevention of microcracking, adequate time for the decomposition, and escape of intermediaries prior to surface densification (the so-called “binder burn-off” problem). Additional requirements include the necessity to ensure complete oxygenation throughout the microstructure for full volume superconductivity and the control of texture development for maximizing the attainable transport critical current density. On the basis of the processing issues described, it is concluded that the optimum microstructure is one having finescale, interconnected porosity (to ensure escape of carbonate-like species and subsequent, rapid oxygenation) with a fine grain size (∼1 μm) to avoid microcracking.

Issues in the Processing of Cuprate Ceramic Superconductors

A combination of chemical vapor deposition and scanning tunneling microscopy techniques have been used to produce nanometer-scale, iron-containing deposits with high aspect ratios from an iron pentacarbonyl precursor both on a substrate and on the tunneling tip itself. The structure and composition of the resulting nanodeposits were determined by transmission electron microscopy and high spatial resolution Auger electron spectroscopy. Either polycrystalline, relatively pure, body-centered-cubic iron or disordered carbon-rich material can be deposited, depending on the bias conditions of the tip sample junction and the precursor pressure. Two mechanisms of decomposition are inferred from the growth phenomenology.

https://science.sciencemag.org/content/sci/262/5137/1249.full.pdf

Thomas M. Shaw

Papers

Possible Electrical Double‐Layer Contribution to the Equilibrium Thickness of Intergranular Glass Films in Polycrystalline Ceramics

Annual review of materials research

Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

Issues in the Processing of Cuprate Ceramic Superconductors

Growth of high aspect ratio nanometer-scale magnets with chemical vapor deposition and scanning tunneling microscopy.