Tigran T. Mnatsakanov

TL;DR: In this paper, general expressions for charge carriers transport in high density isothermal plasma of semiconductors and semimetals are derived and a generalised matrix form of the Einstein relation is established.

TL;DR: In this article, stable state and transient characteristics of 10 kV 4H-SiC diodes have been measured in the temperature interval from 293 to 514 K. The results obtained demonstrate a high level of base modulation: at forward current density jF=180 A cm−2, the differential resistance rd of the diode is 24 times lower than the ohmic resistance r0 of the unmodulated base at room temperature.

TL;DR: In this article, a simple analytical method is suggested to calculate the mobility of majority carriers in semiconductors, which allows one to adequately describe experimental data in a wide range of temperatures and doping levels in various kinds of semiconductor: elementary (Si), III-V (GaAs), IV-IV (various SiC polytypes), and III-N (GaN).

TL;DR: In this paper, a 6 kV blocking capability, low forward voltage drop (4.2 V at 100 A/cm2, 5.8 V at 500 A/ cm2), and very small recovery time (≤ 7 ns) have been demonstrated for the first time.

TL;DR: In this article, a qualitative analysis, analytical calculations, and computer simulations have been made to clarify the origin of the turn-on time decrease with increasing temperature in silicon carbide (SiC) thyristors, and the role played by the temperature dependence of the carrier lifetime in the p + -emitter is demonstrated.