M
M. E. Levinshtein
Researcher at Russian Academy of Sciences
Publications - 64
Citations - 1227
M. E. Levinshtein is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Thyristor & Noise (radio). The author has an hindex of 20, co-authored 61 publications receiving 1178 citations.
Papers
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AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
TL;DR: In this paper, low-frequency noise in the frequency region of 20 Hz to 20 kHz was investigated in AlGaN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates.
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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
Nina Dyakonova,Frederic Teppe,Jerzy Łusakowski,Wojciech Knap,M. E. Levinshtein,A. P. Dmitriev,Michael Shur,Sylvain Bollaert,A. Cappy +8 more
TL;DR: In this article, the influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs matched high electron mobility transistors is reported, and it is shown that the threshold source-drain voltage of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T.
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Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
S. L. Rumyantsev,Nezih Pala,Michael Shur,R. Gaska,M. E. Levinshtein,M. Asif Khan,Grigory Simin,Xiaobo Sharon Hu,J. W. Yang +8 more
TL;DR: In this paper, the effect of the gate leakage current fluctuations on noise properties of AlGaN/GaN heterostructure field effect transistors (HFETs) has been studied in conventional HFET structures and in AlGa N/Ga N metal-oxide-semiconductor HetNets.
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"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes
M. E. Levinshtein,Tigran T. Mnatsakanov,Pavel Ivanov,John W. Palmour,Sergey Rumyantsev,Ranbir Singh,S. N. Yurkov +6 more
TL;DR: In this article, a qualitative analysis and a computer simulation have been carried out to clarify the origin of the contradictions in the minority carrier lifetime measurements for 4H-SiC p/sup +/n diodes with 6 kV blocking capability.
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Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
Sergey Rumyantsev,Nezih Pala,Michael Shur,R. Gaska,M. E. Levinshtein,Vinod Adivarahan,J. W. Yang,Grigory Simin,M. Asif Khan +8 more
TL;DR: In this article, the activation energy of local level contributing to noise was found to be Ea≈1 eV, depending on the forward current level, the noise from Schottky barrier or from the series resistance (contacts and/or base) predominates.