Quantum technologies comprise an emerging class of devices capable of controlling superposition and entanglement of quantum states of light or matter, to realize fundamental performance advantages over ordinary classical machines. The technology of integrated quantum photonics has enabled the generation, processing and detection of quantum states of light at a steadily increasing scale and level of complexity, progressing from few-component circuitry occupying centimetre-scale footprints and operating on two photons, to programmable devices approaching 1,000 components occupying millimetre-scale footprints with integrated generation of multiphoton states. This Review summarizes the advances in integrated photonic quantum technologies and its demonstrated applications, including quantum communications, simulations of quantum chemical and physical systems, sampling algorithms, and linear-optic quantum information processing. This Review covers recent progress in integrated quantum photonics (IQP) technologies and their applications. The challenges and opportunities of realizing large-scale, monolithic IQP circuits for future quantum applications are discussed.

Integrated photonic quantum technologies

The growing maturity of integrated photonic technology makes it possible to build increasingly large and complex photonic circuits on the surface of a chip. Today, most of these circuits are designed for a specific application, but the increase in complexity has introduced a generation of photonic circuits that can be programmed using software for a wide variety of functions through a mesh of on-chip waveguides, tunable beam couplers and optical phase shifters. Here we discuss the state of this emerging technology, including recent developments in photonic building blocks and circuit architectures, as well as electronic control and programming strategies. We cover possible applications in linear matrix operations, quantum information processing and microwave photonics, and examine how these generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication. The current state of programmable photonic integrated circuits is discussed, including recent developments in their building blocks, circuit architectures, electronic control and programming strategies, as well as different application spaces.

https://biblio.ugent.be/publication/8677857/file/8677861.pdf

Programmable photonic circuits.

Generations of technologies with fundamentally new information processing capabilities will emerge if microscopic physical systems can be controlled to encode, transmit, and process quantum information, at scale and with high fidelity. In the decade after its 2008 inception, the technology of integrated quantum photonics enabled the generation, processing, and detection of quantum states of light, at a steadily increasing scale and level of complexity. Using both established and advanced fabrication techniques, the field progressed from the demonstrations of fixed circuits comprising few components and operating on two photons, to programmable circuitry approaching 1000 components with integrated generation of multi-photon states. A continuation in this trend over the next decade would usher in a versatile platform for future quantum technologies. This Review summarises the advances in integrated photonic quantum technologies (materials, devices, and functionality), and its demonstrated on-chip applications including secure quantum communications, simulations of quantum physical and chemical systems, Boson sampling, and linear-optic quantum information processing.

Integrated Photonic Quantum Technologies

Recent developments in chip-based photonic quantum circuits have radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our Review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations, including optical connectivity and operation conditions, and highlights several successful realizations of key physical resources for building a quantum teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid-state platform, which hold great potential for quantum information applications. The Review summarizes the progress of hybrid quantum photonics integration in terms of its important design considerations and fabrication approaches, and highlights some successful realizations of key physical resources for building integrated quantum devices, such as quantum teleporters, quantum repeaters and quantum simulators.

https://www.nature.com/articles/s41566-020-0609-x.pdf?proof=t

Hybrid integrated quantum photonic circuits.

Hybrid organic–inorganic perovskites (HOIPs) offer long carrier-diffusion lengths, high absorption coefficients, tunable band gaps and long spin lifetimes. The flexible crystal structure and ionic nature of HOIPs make it possible to allow tuning of their material properties through rational design, including the incorporation of chiral organic ligands. Recently, chiral HOIPs have emerged as promising materials for chiroptoelectronics, spintronics and ferroelectrics. They exhibit high photoluminescence polarization (17% without an external magnetic field), good device performance (a circularly polarized photodetector had 100 times higher responsivity than one based on a chiral metasurface) and high saturated polarization (~2 times higher than that of barium titanate). Here, we review the latest advances in chiral HOIPs and investigate the specific benefits of combining chiral organic and inorganic components in perovskites. We discuss demonstrations of chiroptical and ferroelectric applications, and conclude with our perspective on the future opportunities for chiral HOIPs. Chiral hybrid organic–inorganic perovskites combine the remarkable optical, electrical and spintronic properties of perovskites with chirality. This Review systematically introduces the latest advances in chiral perovskites, surveys their structure–property relationships and details their chiroptical and ferroelectric applications.

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Chiral perovskite optoelectronics

The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for integrating such compact circuits, but a strong Pockels effect is not available on silicon platforms. Here, we demonstrate a large electro-optical response in silicon photonic devices using barium titanate. We verify the Pockels effect to be the physical origin of the response, with r42 = 923 pm V−1, by confirming key signatures of the Pockels effect in ferroelectrics: the electro-optic response exhibits a crystalline anisotropy, remains strong at high frequencies, and shows hysteresis on changing the electric field. We prove that the Pockels effect remains strong even in nanoscale devices, and show as a practical example data modulation up to 50 Gbit s−1. We foresee that our work will enable novel device concepts with an application area largely extending beyond communication technologies. Electro-optic modulators based on epitaxial barium titanate (BTO) integrated on silicon exhibit speeds up to 50 Gbit s–1 while the Pockels coefficient of the BTO film is found to be approaching the bulk value.

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes.

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Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

We have extracted temperature-dependent thermal conductivity values from scanning thermal microscopy measurements of a self-heated multiwalled carbon nanotube supported on a silicon substrate. A de...

Thermal Conductivity of a Supported Multiwalled Carbon Nanotube

We report on local measurements of the surface potential and quantum capacitance in single layer graphene as well as multilayers thereof as a function of the carrier density by using frequency-modulated Kelvin probe force microscopy. We find excellent agreement to tight-binding calculations reported for graphene monolayers and extract the minimum quantum capacitance from density sweeps at room temperature. The surface potential of graphene multilayers is found to depend linearly on the carrier density, which suggests treating them as two-dimensional electron gases. In addition, we demonstrate that the simultaneously detected second harmonic of the Kelvin modulation, proportional to |∂2C/∂z2|, is directly sensitive to local changes in the quantum capacitance of graphene.

Probing the local surface potential and quantum capacitance in single and multi-layer graphene

As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. Therefore, being able to observe profiles of both electronic and thermal device properties at the nanoscale is important. Here, we show measurements by scanning thermal and Kelvin probe force microscopy of the same 60 nm diameter indium arsenide nanowire in operation. The observed temperature along the wire is substantially elevated near the contacts and deviates from the bell-shaped temperature profile one would expect from homogeneous heating. Voltage profiles acquired by Kelvin probe force microscopy not only allow us to determine the electrical nanowire conductivity, but also to identify and quantify sizable and non-linear contact resistances at the buried nanowire-electrode interfaces. Complementing these data with thermal measurements, we obtain a device model further permitting separate extraction of the local thermal nanowire and interface conductivities.

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Tino Wagner

Papers

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Thermal Conductivity of a Supported Multiwalled Carbon Nanotube

Probing the local surface potential and quantum capacitance in single and multi-layer graphene

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire.