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Tom J. Kazmierski

Researcher at University of Southampton

Publications -  123
Citations -  915

Tom J. Kazmierski is an academic researcher from University of Southampton. The author has contributed to research in topics: VHDL-AMS & Hardware description language. The author has an hindex of 13, co-authored 122 publications receiving 833 citations. Previous affiliations of Tom J. Kazmierski include University of Cartagena & Applied Science Private University.

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Accurate Supercapacitor Modeling for Energy Harvesting Wireless Sensor Nodes

TL;DR: It is shown that observations previously attributed to leakage are predominantly due to redistribution of charge inside the supercapacitor, and the development of a circuit-based model is confirmed, which accurately represents non-ideal behavior.
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Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation

TL;DR: In this article, an efficient carbon nanotube (CNT) transistor modeling technique based on cubic spline approximation of the nonequilibrium mobile charge density is presented. But the model is not suitable for the CNT drain-source current.
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Overview of SPICE-like circuit simulation algorithms

TL;DR: The reasons for convergence failure in both transient and DC simulation are related to the underlying principles of simulation and possible ill conditioning of the circuit.
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Ultra-Low Power 18-Transistor Fully Static Contention-Free Single-Phase Clocked Flip-Flop in 65-nm CMOS

TL;DR: Simulation results show the proposed 18TSPC is two times more efficient than TGFF in the energy-delay space, and to demonstrate EDA compatibility and circuit/system-level benefits, a shift register and an AES-128 encryption engine have been implemented.
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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

TL;DR: In this paper, a SPICE compatible model of a dual-gate bilayer graphene field effect transistor has been presented, which describes the functionality of the transistor in all the regions of operation for both hole and electron conduction.