Tong Guan

TL;DR: A much suppressed bulk conductivity at large negative gate voltages is suggested and a possible role of surface states in the WAL phenomena is suggested.

TL;DR: In this article, single crystalline (Bi1−xSbx)2Te3 films have been grown on SrTiO3(111) substrates by molecular beam epitaxy and a full range of Sb-Bi compositions were studied in order to obtain the lowest possible bulk conductivity.

TL;DR: In this paper, the authors demonstrate optical isolation of infrared light in purely linear and passive silicon photonic structures and show that the round-trip transmissivity of in-plane infrared light across a silicon polysilicon crystal slab heterojunction diode could be two orders of magnitudes smaller than the forward transmissivities at around 1,550 nm with a bandwidth of about 50 nm, indicating good performance of optical isolation.

TL;DR: The results suggest that n-HgCr2Se4 is a half-metal, in agreement with theoretical calculations that also predict undoped Hg Cr2Se3/Pb junctions is a magnetic Weyl semimetal.

TL;DR: The magnetoconductivity is obtained, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest n_{Cr}, contrary to the expectation that the deposited Cr should break the time-reversal symmetry and induce a gap opening at the Dirac point.