F
Fanming Qu
Researcher at Chinese Academy of Sciences
Publications - 60
Citations - 2401
Fanming Qu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Superconductivity. The author has an hindex of 20, co-authored 47 publications receiving 1999 citations. Previous affiliations of Fanming Qu include Delft University of Technology.
Papers
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Journal ArticleDOI
Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi 2 Se 3
J. C. Chen,Huajun Qin,Fan Yang,J. Liu,Tong Guan,Fanming Qu,G. H. Zhang,Junren Shi,X. C. Xie,X. C. Xie,C. L. Yang,Kehui Wu,Yu Li,Ling Lu +13 more
TL;DR: A much suppressed bulk conductivity at large negative gate voltages is suggested and a possible role of surface states in the WAL phenomena is suggested.
Journal ArticleDOI
A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3.
Yunzhong Chen,Nicolas Bovet,Felix Trier,Dennis Christensen,Fanming Qu,Niels Hessel Andersen,Takeshi Kasama,Wei Zhang,R. Giraud,J. Dufouleur,Thomas Sand Jespersen,Jinghan Sun,Anders Smith,Jesper Nygård,Lanlu Lu,Bernd Büchner,B. G. Shen,Søren Linderoth,Nini Pryds +18 more
TL;DR: The spinel/perovskiteTwo-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface.
Journal ArticleDOI
Edge-mode superconductivity in a two-dimensional topological insulator
Vlad Pribiag,Arjan J. A. Beukman,Fanming Qu,Maja C. Cassidy,Christophe Charpentier,Werner Wegscheider,Leo P. Kouwenhoven +6 more
TL;DR: These experiments establish InAs/GaSb as a promising platform for the confinement of Majoranas into localized states, enabling future investigations of non-Abelian statistics and gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport.
Journal ArticleDOI
Edge transport in the trivial phase of InAs/GaSb
Fabrizio Nichele,Henri J. Suominen,Morten Kjaergaard,Charles Marcus,Ebrahim Sajadi,Joshua Folk,Fanming Qu,Arjan J. A. Beukman,Folkert K. de Vries,Jasper van Veen,Stevan Nadj-Perge,Leo P. Kouwenhoven,Binh-Minh Nguyen,Andrey A. Kiselev,Wei Yi,Marko Sokolich,Michael J. Manfra,Eric Spanton,Eric Spanton,Kathryn A. Moler,Kathryn A. Moler +20 more
TL;DR: In this article, transport and scanning measurements on InAs/GaSb double quantum wells are presented, where the top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime.
Journal ArticleDOI
Strong Superconducting Proximity Effect in Pb-Bi2Te3 Hybrid Structures
Fanming Qu,Fan Yang,Jie Shen,Yue Ding,Jun Chen,Zhongqing Ji,Guangtong Liu,Jie Fan,Xiunian Jing,Changli Yang,Li Lu +10 more
TL;DR: It is demonstrated that superconducting quantum interference devices can be constructed based on the proximity-effect-induced superconductivity, and the critical current of the devices exhibits s-wave-like interference and Fraunhofer diffraction patterns.